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BAT54SW

更新时间: 2024-11-28 06:41:31
品牌 Logo 应用领域
RECTRON 肖特基二极管光电二极管
页数 文件大小 规格书
2页 89K
描述
SOT-323 SURFACE MOUNT SCHOTTKY BARRIER DIODE

BAT54SW 数据手册

 浏览型号BAT54SW的Datasheet PDF文件第2页 
RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
BAT54SW  
SOT-323 SURFACE MOUNT SCHOTTKY  
BARRIER DIODE  
FEATURES  
* Low forward voltage drop  
Fast switching  
*
*
*
Uitra - small surface mount package  
PN Junction guard ring for transient and ESD protection  
Marking: KL8  
SOT-323  
0.053(1.35)  
0.045(1.15)  
MECHANICAL DATA  
* Case: Molded plastic  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.004(0.10)  
0.000(0.00)  
REF 0.021(0.53)  
* Weight: 0.006 gram  
0.096(2.45)  
0.085(2.15)  
0.016(0.40)  
0.008(0.20)  
0.055(1.40)  
0.047(1.20)  
0.087(2.20)  
0.079(2.00)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
Peak repetitive reverse voltage  
SYMBOL  
VRRM  
VALUE  
30  
UNITS  
V
working peak reverse voltage  
DC blocking voltage  
30  
30  
VRWM  
VR  
µA  
µA  
µA  
Forward contiunous current (Note 1)  
Repetitive peak forward current (Note 1)  
Forward surge current (Note 1)  
Power dissipation (Note 1)  
IF  
200  
300  
600  
200  
625  
IFRM  
@ t < 1.0 s  
IFSM  
PD  
µW  
RqJA  
Κ/Ω  
Thermal resistance, Junction to ambient air (Note 1)  
Operating and storage temperature range  
-65~+125  
oC  
Tj, Tstg  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
UNITS  
V
CHARACTERISTICS  
SYMBOL  
MIN  
30  
TYP  
-
MAX  
-
Reveres breakdown voltage (IRS= 100mA)  
V(BR)R  
-
-
-
-
-
-
240  
320  
400  
(I = 0.1mA)  
F
(I = 1mA)  
F
mV  
Forward voltage (Note 2)  
(I = 10mA)  
F
VF  
(I = 30mA)  
F
-
-
-
-
-
-
-
500  
1000  
2.0  
(I = 100mA)  
F
Reverse leakage current (V = 25V) (Note 2)  
R
-
-
mA  
IR  
10  
F
P
Cj  
trr  
Junction capacitance (V = 1.0V, f= 1.0MHz)  
R
Reveres recovery time (I =10mA through I =10mA to I =1.0mA,R =100W)  
-
5.0  
ns  
F
R
R
L
2006-3  
Notes: 1. Valid provided that terminals are kept at ambient temperature.  
2. t <300ms, duty cycle <2%.  
p
DS30065 Rev. 2P-1  

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