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BAT54SDW-TP-HF PDF预览

BAT54SDW-TP-HF

更新时间: 2024-11-28 13:05:51
品牌 Logo 应用领域
美微科 - MCC 肖特基二极管光电二极管
页数 文件大小 规格书
3页 103K
描述
Rectifier Diode, Schottky, 4 Element, 0.2A, 30V V(RRM), Silicon,

BAT54SDW-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.55配置:2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G6湿度敏感等级:1
元件数量:4端子数量:6
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAT54SDW-TP-HF 数据手册

 浏览型号BAT54SDW-TP-HF的Datasheet PDF文件第2页浏览型号BAT54SDW-TP-HF的Datasheet PDF文件第3页 
M C C  
BAT54  
THRU  
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21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
BAT54S  
Features  
·
·
·
Low Forward Voltage  
Surface Mount device  
Very small conduction losses  
250mWatt, 30Volt  
Schottky Barrier Diode  
MCC  
Catalog  
Number  
BAT54  
BAT54A  
BAT54C  
BAT54S  
Device  
Marking  
Pin  
Type  
Configuration  
(See Page 3)  
SOT-23  
L4P  
L42  
L43  
L44  
Single  
Dual  
Dual  
Dual  
Figure 1  
Figure 2  
Figure 3  
Figure 4  
A
D
B
C
F
E
Maximum Ratings  
Continuos Reverse Voltage  
Forward Current  
VR  
IF  
30V  
0.3A  
H
G
J
Non-Repetitive Peak Forward Current t<1s  
Total Power Dissipation @ TA = 25°C  
Storage Temperature Range  
IFSM  
PD  
1.0mA  
250mW  
K
Tstg  
Tj  
-55°C to 150°C  
150°C  
DIMENSIONS  
MM  
Junction Temperature  
INCHES  
MIN  
Soldering temperature during 10s  
Tj  
260°C  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
Electrical Characteristics @ 25 °C Unless Otherwise Specified  
F
Ratings  
Forward Voltage at  
IF = 0.1mA  
Symbol  
Max.  
Notes  
G
H
J
.085  
.37  
240mV  
320mV  
400mV  
500mV  
900mV  
2.0 uA  
>30V  
K
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
VF  
Suggested Solder  
Pad Layout  
.031  
.800  
Reverse Current  
Reverse Breakdown  
Voltage  
IR  
V(BR)  
VR = 25V  
.035  
.900  
.079  
2.000  
inches  
mm  
Capacitance  
CJ  
trr  
10pF  
5nS  
Measured at  
1.0MHz, VR=1.0V  
IF=IR=10mA;  
I(REC) = 1mA  
Reverse Recovery  
Time  
.037  
.950  
Thermal Resistance,  
Junction to Ambient  
RqJA  
500K/W  
.037  
.950  
www.mccsemi.com  

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