LESHAN RADIO COMPANY, LTD.
SchottkyBarrierDiodes
BAT54RLT1
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excellent
for hand held and portable applications where space is limited.
• Extremely Fast Switching Speed
30 VOLTS
SILICON HOT- CARRIER
DETECTOR AND
SWITCHING
DIODES
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
3
1
ANODE
3
CATHODE
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
DEVICE MARKING
BAT54RLT1 = LV3
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
Rating
Reverse Voltage
Symbol
Value
Unit
V R
P F
30
Volts
Forward Power Dissipation
@ T A = 25°C
200
2.0
mW
Derate above 25°C
Operating Junction
mW/°C
T J
Temperature Range
Storage Temperature Range
–55 to +125
–55 to +150
°C
°C
T stg
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
V (BR)R
C T
Min
30
—
Typ
—
Max
—
Unit
Volts
pF
Reverse Breakdown Voltage (I R = 10 µA)
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)
Reverse Leakage (V R = 25 V)
7.6
0.5
10
I R
—
2.0
0.24
0.5
1.0
µAdc
Vdc
Vdc
Vdc
Forward Voltage (I F = 0.1 mAdc)
Forward Voltage (I F = 30 mAdc)
Forward Voltage (I F = 100 mAdc)
Reverse Recovery Time
V F
—
0.22
0.41
0.52
V F
—
V F
—
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) Figure 1
Forward Voltage (I F = 1.0 mAdc)
Forward Voltage (I F = 10 mAdc)
t rr
—
—
—
—
5.0
ns
V F
V F
0.29
0.35
0.32
0.40
Vdc
Vdc
G11–1/2