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BAT54JW_1 PDF预览

BAT54JW_1

更新时间: 2024-11-28 03:01:51
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
3页 75K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

BAT54JW_1 数据手册

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SPICE MODEL: BAT54JW  
BAT54JW  
Lead-free  
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY  
Features  
A
·
·
·
·
Low Forward Voltage Drop  
SOT-363  
Fast Switching  
Dim  
A
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
Ultra-Small Surface Mount Package  
C
B
PN Junction Guard Ring for Transient and  
ESD Protection  
B
G
H
·
Lead Free/RoHS Compliant (Note 3)  
C
D
0.65 Nominal  
Mechanical Data  
K
J
M
F
0.30  
1.80  
¾
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
·
Case: SOT-363  
H
L
D
F
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
J
C2  
C1  
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
K
0.90  
0.25  
0.10  
0°  
(Jumper  
Terminals: Solderable per MIL-STD-202, Method 208  
L
connection  
between  
middle pins)  
Lead Free Plating (Matte Tin Finish annealed  
over Alloy 42 leadframe).  
M
a
A1  
A2  
·
·
·
Orientation: See Diagram  
Weight: 0.006 grams (approx.)  
Marking: KLC (See Page 2)  
All Dimensions in mm  
TOP VIEW  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
IF  
IFRM  
IFSM  
200  
300  
mA  
mA  
Forward Continuous Current (Note 1)  
Repetitive Peak Forward Current (Note 1)  
Forward Surge Current (Note 1)  
Power Dissipation (Note 1)  
600  
mA  
@ t < 1.0s  
Pd  
200  
mW  
°C/W  
°C  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
625  
-65 to +125  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Test Condition  
V(BR)R  
30  
Reverse Breakdown Voltage (Note 2)  
IR = 100mA  
¾
¾
V
IF = 0.1mA  
240  
320  
400  
500  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
mV  
Forward Voltage  
¾
¾
VF  
1000  
VR = 25V  
IR  
Reverse Leakage Current (Note 2)  
Total Capacitance  
¾
¾
¾
2.0  
mA  
VR = 1.0V, f = 1.0MHz  
CT  
¾
10  
pF  
IF = 10mA through IR = 10mA  
to IR = 1.0mA, RL = 100W  
trr  
Reverse Recovery Time  
¾
¾
5.0  
ns  
Notes:  
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
3. No purposefully added lead.  
DS30157 Rev. 9 - 2  
1 of 3  
BAT54JW  
www.diodes.com  
ã Diodes Incorporated  

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