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BAT54HT1G_10 PDF预览

BAT54HT1G_10

更新时间: 2024-11-28 12:51:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 信号二极管
页数 文件大小 规格书
4页 171K
描述
Small Signal Diode

BAT54HT1G_10 数据手册

 浏览型号BAT54HT1G_10的Datasheet PDF文件第2页浏览型号BAT54HT1G_10的Datasheet PDF文件第3页浏览型号BAT54HT1G_10的Datasheet PDF文件第4页 
March 2010  
BAT54HT1G  
Small Signal Diode  
Connection Diagram  
1
1
A2  
2
SOD-323  
2
Absolute Maximum Ratings * TA = 25°C unless otherwise noted  
Symbol  
VRRM  
Parameter  
Value  
30  
Units  
V
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
IF(AV)  
200  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
IFSM  
600  
mA  
TSTG  
TJ  
Storage Temperature Range  
-65 to +150  
-55 to +150  
°C  
°C  
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of the diode may be impaired.  
NOTES:  
1)These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle  
operations.  
Thermal Characteristics  
Symbol  
PD  
Parameter  
Value  
200  
Units  
mW  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
RθJA  
600  
°C/W  
Electrical Characteristics TA=25°C unless otherwise noted  
Symbol  
Parameter  
Breakdown Voltage  
Forward Voltage  
Test Conditions  
Min.  
Max.  
Units  
VR  
IR = 10μA  
30  
V
VF  
IF = 0.1mA  
IF = 1.0mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
240  
320  
400  
500  
0.8  
mV  
mV  
mV  
mV  
V
IR  
CT  
trr  
Reverse Leakage  
Total Capacitance  
VR = 25V  
2.0  
10  
μA  
pF  
ns  
VR = 1V, f = 1.0MHz  
Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA,  
5.0  
RL = 100Ω  
© 2010 Fairchild Semiconductor Corporation  
BAT54HT1G Rev. A1  
www.fairchildsemi.com  
1

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