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BAT54/E9 PDF预览

BAT54/E9

更新时间: 2024-11-01 21:09:11
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管
页数 文件大小 规格书
3页 70K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, TO-236AB

BAT54/E9 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.02
其他特性:FAST SWITCHING配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.24 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
最大非重复峰值正向电流:0.6 A元件数量:1
端子数量:3最高工作温度:125 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.23 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

BAT54/E9 数据手册

 浏览型号BAT54/E9的Datasheet PDF文件第2页浏览型号BAT54/E9的Datasheet PDF文件第3页 
BAT54 thru BAT54S  
Schottky Diodes  
TO-236AB (SOT-23)  
Features  
.122 (3.1)  
.110 (2.8)  
These diodes feature very low turn-on voltage and  
fast switching.  
.016 (0.4)  
Top View  
These devices are protected by a PN junction  
guard ring against excessive voltage, such as  
electrostatic discharges.  
3
Mechanical Data  
Case: SOT-23 Plastic Package  
1
2
Weight: approx. 0.008g  
.037(0.95)  
.037(0.95)  
Packaging Codes/Options:  
E8/10K per 13reel (8mm tape), 30K/box  
E9/3K per 7reel (8mm tape), 30K/box  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
Dimensions in inches and (millimeters)  
Mounting Pad Layout  
BAT54  
Marking: L4  
BAT54A  
Marking: L42  
0.031 (0.8)  
Top View  
0.035 (0.9)  
BAT54S  
Marking: L44  
BAT54C  
Marking: L43  
0.079 (2.0)  
Top View  
0.037 (0.95)  
0.037 (0.95)  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VRRM  
IF  
Value  
Unit  
V
Repetitive Peak Reverse Voltage  
Forward Continuous Current at Tamb = 25°C  
Repetitive Peak Forward Current at Tamb = 25°C  
Surge Forward Current at tp < 1 s, Tamb = 25°C  
Power Dissipation at Tamb = 25°C  
Thermal Resistance Junction to Ambiant Air  
Junction Temperature  
30  
200(1)  
300(1)  
600(1)  
230  
mA  
mA  
mA  
mW  
°C/W  
°C  
IFRM  
IFSM  
Ptot  
RθJA  
Tj  
430(1)  
150  
Storage Temperature Range  
TS  
65 to +150  
°C  
Note: (1) Device on fiberglass substrate, see layout on next page.  
4/19/01  

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