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BAT54C-7-F PDF预览

BAT54C-7-F

更新时间: 2024-11-18 08:48:43
品牌 Logo 应用领域
美台 - DIODES 整流二极管肖特基二极管光电二极管
页数 文件大小 规格书
4页 89K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

BAT54C-7-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:15 weeks风险等级:0.57
其他特性:HIGH RELIABILITY配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.24 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.6 A元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

BAT54C-7-F 数据手册

 浏览型号BAT54C-7-F的Datasheet PDF文件第2页浏览型号BAT54C-7-F的Datasheet PDF文件第3页浏览型号BAT54C-7-F的Datasheet PDF文件第4页 
BAT54 /A /C /S  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
Mechanical Data  
Low Turn-on Voltage  
Fast Switching  
PN Junction Guard Ring for Transient and ESD Protection  
Lead Free/RoHS Compliant (Note 3)  
“Green” Molding Compound (No Br, Sb) (Note 4)  
Qualified to AEC-Q101 Standards for High Reliability  
Case: SOT-23  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Polarity: See Diagrams Below  
Marking Information: See Page 3  
Ordering Information: See Page 2  
Weight: 0.008 grams (approximate)  
Top View  
BAT54  
BAT54A  
BAT54C  
BAT54S  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VRRM  
VRWM  
VR  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
Forward Continuous Current (Note 2)  
Repetitive Peak Forward Current  
200  
300  
600  
mA  
mA  
mA  
IF  
IFRM  
IFSM  
Forward Surge Current  
@ t < 1.0s  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 2)  
Symbol  
Value  
200  
Unit  
mW  
°C/W  
°C  
PD  
Thermal Resistance, Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range (Note 5)  
500  
Rθ  
JA  
-65 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage (Note 1)  
30  
V
V(BR)R  
IRS = 100μA  
IF = 0.1mA  
IF = 1mA  
IF = 10mA  
IF = 30mA  
240  
320  
400  
500  
800  
Forward Voltage  
mV  
VF  
IF = 100mA  
Reverse Leakage Current (Note 1)  
Total Capacitance  
2.0  
10  
IR  
μA  
pF  
VR = 25V  
CT  
VR = 1.0V, f = 1.0MHz  
IF = 10mA through IR = 10mA to  
IR = 1.0mA, RL = 100Ω  
Reverse Recovery Time  
5.0  
ns  
trr  
Notes:  
1. Short duration test pulse used to minimize self-heating effect.  
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. No purposefully added lead.  
4. Products manufactured with date code VD (Week 50, 2008) and newer are built with Green Molding Compound. Products manufactured with date code  
prior to VD are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
5. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RθJA  
1 of 4  
www.diodes.com  
June 2010  
© Diodes Incorporated  
BAT54 /A /C /S  
Document number: DS11005 Rev. 25 - 2  

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