Datasheet > BAT54C

BAT54C

更新时间： 2024-11-26 06:41:31

品牌	Logo	应用领域
DAESAN		肖特基二极管光电二极管
页数	文件大小	规格书
2页	293K
描述
Surface Mount Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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BAT54C 数据手册

Surface Mount Schottky

Barrier Diode

BAT54 / BAT54A / BAT54C / BAT54S

Features

SOT-23

Low Turn-on Voltage

Dim

Min

Max

Fast Switching

PN Junction Guard Ring for Transient and

ESD Protection

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

To p Vie w

Mechanical Data

Case: Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: See Diagrams Below

Weight: 0.008 grams (approx.)

Mounting Position: Any

All Dimensionin mm

ANODE

CATHODE

ANODE

CATHODE

ANODE

CATHODE

ANODE

CATHODE

ANODE

CATHODE

ANODE

CATHODE

BAT54 Marking : LV3

MAXI MU M RATI NG S (T = 125 unless otherwise noted)

BAT54A Marking : BG

BAT54C Marking : KV3

BAT 54S Marking : LD3

^oC

Rating

Reverse Voltage

Symbol

Value

Unit

Volts

Forward Power Dissipation

^oC

@ T = 25

Derate above 25

225

1.8

mW/^oC

^oC

Forward Current (DC)

200 Max

125 Max

^oC

Junction Temperature

Storage Temperature Range

stg

-55 to +150

ELECTRICAL CHARACTERISTICS(T = 25 Cunless otherwise noted) (EACH DIODE)

Characteristic

Reverse Breakdown Voltage (I = 10 mA)

Symbol

Min

Typ

Max

Unit

Volts

(BR)R

Total Capacitance (V = 1.0 V, f = 1.0 MHz)

7.6

0.5

2.0

0.24

0.5

1.0

5.0

Reverse Leakage (V = 25 V)

mAdc

Vdc

Forward Voltage (I = 0.1 mAdc)

0.22

0.41

0.52

Forward Voltage (I = 30 mAdc)

Forward Voltage (I = 100 mAdc)

Reverse Recovery Time

(I = I = 10 mAdc, I

= 1.0 mAdc) Figure 1

R(REC)

Forward Voltage (I = 1.0 mAdc)

0.29

0.35

0.32

0.40

200

300

600

Vdc

Forward Voltage (I = 10 mAdc)

Forward Current (DC)

mAdc

Repetitive Peak Forward Current

FRM

Non epetitivePeak Forward Current (t < 1.0 s)

FSM

中文翻译

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