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BAT54_11 PDF预览

BAT54_11

更新时间: 2024-11-01 08:48:51
品牌 Logo 应用领域
美微科 - MCC 肖特基二极管
页数 文件大小 规格书
3页 194K
描述
200mWatt, 30Volt Schottky Barrier Diode

BAT54_11 数据手册

 浏览型号BAT54_11的Datasheet PDF文件第2页浏览型号BAT54_11的Datasheet PDF文件第3页 
M C C  
Micro Commercial Components  
BAT54  
THRU  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
BAT54S  
Features  
·
Low Forward Voltage  
Surface Mount device  
200mWatt, 30Volt  
Schottky Barrier Diode  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
Device Marking  
MCC Catalog  
Number  
Pin  
Type  
Configuration  
See page 3  
1
2
SOT-23  
Single  
Dual  
Dual  
Dual  
L4  
Figure  
1
BAT54  
KL1  
KL2  
KL3  
KL4  
A
L42  
L43  
L44  
BAT54A  
BAT54C  
BAT54S  
Figure 2  
Figure 3  
Figure 4  
D
B
C
F
E
Maximum Ratings  
Continuos Reverse Voltage  
Forward ContinuousCurrent  
VR  
IF  
30V  
200mA  
H
G
J
Non-Repetitive Peak Forward Current t<1s  
Total Power Dissipation @ TA = 25°C  
Storage Temperature Range  
IFSM  
PD  
0.6A  
200mW  
K
Tstg  
Tj  
-55°C to 150°C  
-55°C to 125°C  
260°C  
DIMENSIONS  
MM  
Operating Junction Temperature Range  
Soldering temperature during 10s  
INCHES  
MIN  
T
DIM  
A
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
B
C
D
E
Electrical Characteristics @ 25 °C Unless Otherwise Specified  
1.78  
.45  
F
Characteristics  
Forward Voltage at  
IF = 0.1mA  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
Reverse Current  
Symbol  
Max.  
Notes  
G
H
J
.013  
.89  
.100  
1.12  
.180  
.51  
.085  
.37  
240mV  
320mV  
400mV  
500mV  
1000mV  
2.0 uA  
K
VF  
Suggested Solder  
Pad Layout  
.031  
.800  
IR  
VR = 25V  
.035  
.900  
.079  
2.000  
in  
ches  
mm  
Capacitance  
CJ  
trr  
10pF  
5nS  
Measured at  
1.0MHz, VR=1.0V  
IF=IR=10mA;  
I(REC) = 1mA  
Reverse Recovery  
Time  
.037  
.950  
Thermal Resistance,  
Junction to Ambient  
°C/W  
500  
RθJA  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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