BAT54

更新时间： 2024-09-28 22:39:27

品牌	Logo	应用领域
捷特科 - ZETEX		二极管光电二极管
页数	文件大小	规格书
2页	105K
描述
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES

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数据手册

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BAT54 数据手册

SOT23 SILICON EPITAXIAL

BAT54 SERIES

SCHOTTKY BARRIER DIODES

✪

ISSUE 1 SEPTEMBER 1995

BAT54

BAT54A

BAT54S

SERIES

BAT54C

Device Type

SINGLE

COMMON

ANODE

COMMON

CATHODE

Pin Configuration

L4Z

L42

L44

L43

Partmarking Detail

FEATURES: Low V_F& High Current Capability

APPLICATIONS: PSU, Mobile Telecomms & SCSI

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Continuous Reverse Voltage

Forward Current

V_R

I_F

200

°C

Forward Voltage @ I_F=10mA

Repetitive Peak Forward Current

Non Repetitive Forward Current t<1s

Power Dissipation at T_amb=25°C

Storage Temperature Range

V_F

400

I_FRM

I_FSM

P_tot

T_stg

T_j

300

600

330

-55 to +150

125

JunctionTemperature

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT CONDITIONS.

Reverse Breakdown V_(BR)R

Voltage

I_R=10µA

Forward Voltage

V_F

135

200

280

350

530

240

320

400

500

I_F=0.1mA

I_F=1mA

I_F=10mA

I_F=30mA

I_F=100mA

1000 mV

Reverse Current

I_R

2.5

7.5

V_R=25V

µA

Diode Capacitance

C_D

t_rr

f=1MHz,V_R=1V

Reverse Recover

Time

switched from

I_F=10mA to I_R=10mA

R_L=100Ω, Measured

at I_R=1mA

¤ Dual Device; For simultaneous continuous use T_j=100°C.

3 - 4

中文翻译

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