Datasheet > BAT46JV

BAT46JV

更新时间： 2024-07-16 10:39:38

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
4页	446K
描述
Reverse Voltage Vr : 100 V;Forward Current Io : 0.15 A;Max Surge Current : 0.75 A;Forward Voltage Vf : 1.0 V;Reverse Current Ir : 2 uA;Recovery Time : N/A;Package / Case : SOD-323;Mounting Style : SMD/SMT;Certified (AEC-Q101...etc) : AEC-Q101

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BAT46JV 数据手册

BAT46JV

SCHOTTKY BARRIER DIODE

FEATURES

SOD-323

High breakdown voltage

Low turn-on voltage

Guard ring construction for transient protection

P/N suffix V means AEC-Q101 qualified, e.g:BAT46JV

P/N suffix V means Halogen-free

MARKING: S9

The marking bar indicates the cathode

Solid dot = Green molding compound device,if none,

the normal device.

Maximum Ratings @T^a=25℃

Parameter

Symbol

Unit

Limit

100

Peak repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

Forward continuo us current

I_F

150

350

750

Repetitive peak forward current (Note 1) @ tp < 1.0s, Duty Cycle < 50%

I_FRM

I_FSM

Non-repetitive Peak Forward surge current @ t = 8.3ms

Typical Current Squared Time

I²T

P_D

0.002

500

A S

Power dissipa tion

Thermal resist ance junction to ambient air

Junction temperature

R_θJA

T_j

200

125

℃/W

℃

Storage temperature

T_STG

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Max

Unit

Typ

Reversebrea kdown voltage(Note 2)

V_R

I_R= 100μA

V_R1=1.5V

100

0.3

0.5

V_R2=10V

V_R3=50V

V_R4=75V

Reverse voltageleakage current

I_R

μA

I_F1=0.1mA

I_F2=10mA

I^F3=250mA

0.25

0.45

Forward vo ltage(Note 2)

Diode capacitance

V_F

C_T

V_R=0, f=1MHz

V_R=1V, f=1MHz

2020-11/08

REV:O

Notes: 1. Part mounted on FR-4 board with recommended pad layout.

2. Short duration pulse test used to minimize self-heating effect.

12 3 4

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