Datasheet > BAT24-02ELS

BAT24-02ELS

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	337K
描述
RF Mixer and Detector Schottky Diode

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中文翻译

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技术参数
数据手册

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BAT24-02ELS 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

BAT24-02ELS 数据手册

BAT24-02ELS

Single silicon Schottky diode

Product description

This Infineon RF Schottky diode is a silicon low barrier N-type device with an

integrated guard ring-on chip for over-voltage protection. Its low barrier

height, low forward voltage and low junction capacitance make BAT24-02ELS

a suitable choice for mixer and detector functions in applications which

frequencies are as high as 24 GHz.

Feature list

•

Low inductance L_S= 0.2 nH (typical)

Low capacitance C = 0.2 pF (typical) at voltage V_R= 0 V and frequency f = 1 MHz

TSSLP-2-3 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 foot print

Pb-free, RoHS compliant and halogen free

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Potential applications

For mixers and detectors in:

•

Mobile devices

Radar systems and modules

Device information

Table 1

Part information

Product name / Ordering code

Package

Marking

Pieces / Reel

configuration

BAT24-02ELS / BAT2402ELSE6327XTSA1

TSSLP-2-3

Single, leadless

15 k

underscore

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions!

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

v2.0

2018-06-30

12 3 4 5 6 7...11

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