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BAT165A PDF预览

BAT165A

更新时间: 2024-10-31 11:11:07
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管
页数 文件大小 规格书
13页 676K
描述
40 V, 0.75 A medium power Schottky barrier rectifierProduction

BAT165A 技术参数

生命周期:Active包装说明:SC-76, 2 PIN
Reach Compliance Code:compliant风险等级:5.71
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.38 W
参考标准:AEC-Q101; IEC-60134最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

BAT165A 数据手册

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BAT165A  
40 V, 0.75 A medium power Schottky barrier rectifier  
2 May 2016  
Product data sheet  
1. General description  
Medium power Schottky barrier rectifier with an integrated guard ring for stress  
protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device  
(SMD) plastic package.  
2. Features and benefits  
Forward current: IF ≤ 0.75 A  
Reverse voltage: VR ≤ 40 V  
Low forward voltage typ. VF = 640 mV  
Low reverse current typ. IR = 1.5 µA  
Very small SMD plastic package  
AEC-Q101 qualified  
3. Applications  
Low voltage rectification  
High efficiency DC-to-DC conversion  
Switch mode power supply  
Reverse polarity protection  
Low power consumption application  
Automotive applications  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
0.75  
40  
Unit  
A
IF  
forward current  
reverse voltage  
forward voltage  
Tsp ≤ 93 °C; δ = 1  
Tj = 25 °C  
-
-
-
-
VR  
VF  
-
V
IF = 750 mA; tp ≤ 300 µs; δ ≤ 0.02 ;  
Tj = 25 °C  
640  
740  
mV  
IR  
reverse current  
VR = 40 V; pulsed; Tj = 25 °C  
VR = 40 V; pulsed; Tj = 65 °C  
-
-
1.5  
30  
8
µA  
µA  
900  
 
 
 

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