Datasheet > BAT165_07

BAT165_07

更新时间： 2024-09-13 08:48:35

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
6页	69K
描述
Medium Power AF Schottky Diode

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BAT165_07 数据手册

BAT165...

Medium Power AF Schottky Diode

• Forward current: 750 mA

Reverse voltage: 40 V

• For low-loss, fast-recovery, meter protection,

bias isolation and clamping applications

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BAT165

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BAT165

Package

Configuration

Marking

SOD323

single

C/White

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Diode reverse voltage

750

500

2.5

Forward current

Average rectified forward current (50/60Hz, sinus) I

FAV

FSM

Non-repetitive peak surge forward current

(t ≤ 10ms)

600

°C

Total power dissipation

tot

T ≤ 93°C

150

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 95

thJS

¹Pb-containing package may be available upon special request

²For T > 25°C the derating of V and I has to be considered. Please refer to the atteched curves.

³For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-04-19

12 3 4 5 6

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