Datasheet > BAT16-600

BAT16-600

更新时间： 2023-12-06 20:10:53

品牌	Logo	应用领域
先科 - SWST		可控硅
页数	文件大小	规格书
4页	675K
描述
可控硅

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中文翻译

获取价格

数据手册

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BAT16-600 数据手册

BAT16-600-HAF

Silicon Bidirectional Thyristors

Features

• Halogen and Antimony Free(HAF), RoHS compliant

1,2: Main Terminal 1,2 3. Gate

TO-220FB Plastic Package

Absolute Maximum Ratings (T_J= 25 C unless otherwise noted)

Parameter

Symbol

V_DRMand V_RRM

I_T(RMS)

Value

600

Unit

Peak Repetitive Forward and Reverse Blocking Voltage ¹⁾

(T_J= - 40 to 125 C, Sine Wave,50 to 60Hz,Gate Open)

On-State RMS Current

(Full Cycle Sine Wave, 60 Hz, T_c= 80 C)

Peak Non-Repetitive Surge Current

(Full Cycle Sine Wave, 60 Hz, T_c= 25 C)

I_TSM

170

Circuit Fusing Considerations (t = 8.3 ms)

Peak Gate Current (T_J= 125 C, t = 20 ms)

Peak Gate Power (T_J= 125 C, t = 20 ms)

Forward Average Gate Power (T_J= 125 C)

I²t

I_GM

120

A²s

P_GM

P_G(AV)

RMS Isolation Voltage

(t = 300 ms, R.H. ≤ 30%, T_a= 25°C)

Viso

2500

Thermal Resistance from Juntion to Case

Thermal Resistance from Juntion to Ambient

Operating Junction Temperature Range

R_θJC

R_θJA

T_j

2.13

C

- 40 to + 125

- 40 to + 150

Storage Temperature Range

T_stg

C

and V_RRMfor all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source

DRM

such that the voltage ratings of the devices are exceeded.

1 / 4

Dated: 08/12/2021 Rev：03

12 3 4

中文翻译

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