Datasheet > BAS70W1

BAS70W1

更新时间： 2024-11-09 14:55:07

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	168K
描述
肖特基二极管

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中文翻译

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BAS70W1 数据手册

BAS70W1

Surface Mount Schottky Barrier Diode

DESCRIPTION

Cathode

Features

Anode

• Low turn-on voltage

• Fast switching

Top View

Simplified outline SOD-123 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

V_RSM

V_R

Value

Unit

Repetitive Peak Reverse Voltage

Non-Repetitive Peak Reverse Voltage

Maximum DC Blocking Voltage

Average Forward Rectified Current

Peak Forward Surge Current (t < 10 ms)

Power Dissipation

I_F(AV)

I_FSM

P_D

℃

100

200

Operating Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 65 to + 150

T_stg

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

500

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 10 µA

Forward Voltage

at I_F= 1 mA

V_F

0.41

at I_F= 15 mA

Reverse Current

at V_R= 50 V

I_R

C_T

t_rr

100

Total Capacitance

at V_R= 0 , f = 1 MHz

Reverse Recovery Time

at I_F= I_R= 10 mA to I_R= 1 mA, R_L= 100 Ω

1 / 3

Dated: 17/05/2022 Rev: 02

12 3

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