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BAS70W-13 PDF预览

BAS70W-13

更新时间: 2024-12-01 03:58:43
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
3页 74K
描述
Rectifier Diode, Schottky, 1 Element, 0.07A, 70V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3

BAS70W-13 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:ULTRA SMALL, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.45配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:0.07 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:70 V
最大反向恢复时间:0.005 µs表面贴装:YES
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10

BAS70W-13 数据手册

 浏览型号BAS70W-13的Datasheet PDF文件第2页浏览型号BAS70W-13的Datasheet PDF文件第3页 
SPICE MODELS: BAS70W BAS70W-04 BAS70W-05 BAS70W-06  
BAS70W/ -04/ -05/ -06  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
·
·
·
·
Low Turn-on Voltage  
Fast Switching  
SOT-323  
PN Junction Guard Ring for Transient and ESD Protection  
Ultra-Small Surface Mount Package  
Dim  
A
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
A
Available in Lead Free/RoHS Compliant Version (Note 3)  
B
C
B
C
Mechanical Data  
D
0.65 Nominal  
E
G
H
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
·
·
Case: SOT-323  
G
H
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
K
J
M
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
J
Terminals: Solderable per MIL-STD-202, Method 208  
K
0.90  
0.25  
0.10  
0°  
L
D
E
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please see Ordering  
Information, Note 5, on Page 3  
L
M
a
·
·
·
Polarity: See Diagrams Below  
All Dimensions in mm  
Marking: See Diagrams Below & Page 3  
Weight: 0.006 grams (approximate)  
TOP VIEW  
BAS70W-06 Marking: K76  
BAS70W-04 Marking: K74  
BAS70W-05 Marking: K75  
BAS70W Marking: K73  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics, Single Diode  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
70  
V
VR(RMS)  
IF  
RMS Reverse Voltage  
49  
70  
V
mA  
mA  
mW  
°C/W  
°C  
Forward Continuous Current (Note 1)  
Non-Repetitive Peak Forward Surge Current @ tp < 1.0s  
Power Dissipation (Note 1)  
IFSM  
Pd  
100  
200  
RqJA  
Tj  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating Temperature Range  
625  
-55 to +125  
-65 to +150  
TSTG  
Storage Temperature Range  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Ratings  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
IR = 10mA  
70  
tp <300µs, IF = 1.0mA  
tp <300µs, IF = 15mA  
410  
1000  
VF  
Forward Voltage (Note 2)  
mV  
IR  
tp < 300µs, VR = 50V  
VR = 0V, f = 1.0MHz  
Reverse Current (Note 2)  
Total Capacitance  
¾
¾
100  
2.0  
nA  
pF  
CT  
IF = IR = 10mA to IR = 1.0mA,  
Irr = 0.1 x IR, RL = 100W  
trr  
Reverse Recovery Time  
5.0  
ns  
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
3. No purposefully added lead.  
DS30113 Rev. 9 - 2  
1 of 3  
BAS70W/ -04/ -05/ -06  
www.diodes.com  
ã Diodes Incorporated  

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