Datasheet > BAS70W-06

BAS70W-06

更新时间： 2024-09-20 17:15:55

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描述
Schottky Diodes

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中文翻译

获取价格

数据手册

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BAS70W-06 数据手册

SMD Type

Diodes

Schottky barrier(double) diodes

BAS70W;BAS70-04W

BAS70-05W;BAS70-06W

Features

Low forward voltage

High breakdown voltage

Guard ring protected

Very small SMD package

Low capacitance.

Absolute Maximum Ratings Ta = 25

Parameter

Continuous reverse voltage

Continuous forward current

Repetitive peak forward current

Non-repetitive peak forward current

Storage temperature

Symbol

V^R

Conditions

Min

Max

Unit

I^F

I^FRM

I^FSM

T^stg

1 s; ä

0.5

100

+150

150

+150

625

10 ms

-65

Junction temperature

Operating ambient temperature

Thermal resistance from junction to ambient

Tamb

Rth j-a

Note 1

K/W

Electrical Characteristics Ta = 25

Param eter

Sym bol

Condition

I^F= 1 m A

Max

Unit

m V

410

750

Forward Voltage

Reverse Current

I^F= 10 m A

I^F= 15 m A

V^R= 50 V; note 1

V^R= 70 V; note 1

IF = 5 m A

100

I^R

Charge carrier life tim e (Krakauer m ethod)

Diode capacitance

100

C^d

f = 1 MHz; VR = 0

Note

1. Pulse test: tp = 300 m s; d = 0.02.

Marking

Type

BAS70W

73*

BAS70-04W

74*

BAS70-05W

75*

BAS70-06W

76*

Marking

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中文翻译

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