Datasheet > BAS70W-05

BAS70W-05

更新时间： 2024-11-30 08:48:31

品牌	Logo	应用领域
金誉半导体 - HTSEMI		二极管
页数	文件大小	规格书
2页	230K
描述
SCHOKKTY DIODE

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中文翻译

获取价格

数据手册

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BAS70W-05 数据手册

BAS70W/-04/-05/-06

SCHOKKTY DIODE

SOT-323

FEATURES

Low Turn-on voltage

Fast switching

Also available in lead free version

BAS70W Marking: K73

BAS70W-04 Marking: K74

BAS70W-05 Marking: K75

BAS70W-06 Marking: K76

MAXIMUM RATINGS @T_A=25℃

Value

Units

Symbol

Parameter

V_R

I_F

DC Voltage

℃

Forward Continuous Current

Power dissipation

200

125

P_D

T_J

Junction Temperature

Storage Temperature

-55-150

℃

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_{(BR) R}

I_R

Test

conditions

MIN

MAX

UNIT

Reverse breakdown voltage

I_R= 10µA

V_R=50V

Reverse voltage

leakage current

100

I_F=1mA

I_F=15mA

410

1000

Forward

Diode

voltage

capacitance

V_F

C_D

V_R=0V,f=1MHz

I_F=I_R=10mA,I_rr=0.1xI_R,

Reveres recovery time

t_rr

R_L=100Ω

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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