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BAS70TW_08

更新时间： 2024-02-27 12:13:24
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美台 - DIODES 二极管
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3页 125K
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SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS

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BAS70TW_08 数据手册

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BAS70TW /DW-04 /DW-05 /DW-06 /BRW  
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
Low Forward Voltage Drop  
Fast Switching  
Ultra-Small Surface Mount Package  
PN Junction Guard Ring for Transient and ESD Protection  
Lead Free/RoHS Compliant (Note 3)  
"Green" Device (Note 4 and 5)  
•
•
Case: SOT-363  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Solderable per MIL-STD-202, Method 208  
•
•
•
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
•
•
•
•
Orientation: See Diagrams Below  
Marking Information: See Page 3  
Ordering Information: See Page 2  
Weight: 0.006 grams (approximate)  
AC  
1
AC  
1
C2  
A2  
A2  
C2  
C3  
C1  
C2  
C1  
A2  
A1  
C2  
C1  
C2  
AC  
2
AC  
2
A1  
A2  
A3  
C2  
A2  
A2  
A1  
C1  
A1  
C1  
A1  
C1  
A1  
Top View  
BAS70BRW  
BAS70DW-04*  
BAS70DW-05*  
BAS70DW-06*  
BAS70TW  
*Symmetrical configuration, no orientation indicator.  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
70  
V
RMS Reverse Voltage  
49  
70  
V
VR(RMS)  
IFM  
Forward Continuous Current (Note 1)  
mA  
mA  
Non-Repetitive Peak Forward Surge Current  
@ t < 1.0s  
100  
IFSM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
200  
Unit  
mW  
Power Dissipation (Note 1)  
Thermal Resistance Junction to Ambient Air (Note 1)  
625  
°C/W  
Rθ  
JA  
TJ  
TSTG  
-55 to +125  
-65 to +125  
Operating and Storage Temperature Range  
°C  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
IR = 10μA  
Reverse Breakdown Voltage (Note 2)  
70  
V(BR)R  
V
⎯
tp <300µs, IF = 1.0mA  
tp <300µs, IF = 15mA  
tp < 300µs, VR = 50V  
VR = 0V, f = 1.0MHz  
410  
1000  
100  
2.0  
mV  
mV  
nA  
pF  
Forward Voltage  
VF  
⎯
Reverse Current (Note 2)  
Total Capacitance  
IR  
CT  
⎯
⎯
IF = IR = 10mA to IR = 1.0mA,  
Irr = 0.1 x IR, RL = 100Ω  
Reverse Recovery Time  
5.0  
ns  
trr  
⎯
Notes:  
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 3  
www.diodes.com  
July 2008  
© Diodes Incorporated  
BAS70TW /DW-04  
/DW-05 /DW-06 /BRW  
Document number: DS30158 Rev. 12 - 2  
123

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