5秒后页面跳转
BAS70-06 PDF预览

BAS70-06

更新时间: 2024-09-24 22:50:19
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
1页 55K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

BAS70-06 数据手册

  
BAS70/ -04/ -05/ -06  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
·
·
Low Turn-on Voltage  
Fast Switching  
PN Junction Guard Ring for Transient and  
ESD Protection  
SOT-23  
Dim  
A
Min  
0.37  
1.19  
2.10  
0.89  
0.45  
1.78  
2.65  
0.013  
0.89  
0.45  
0.076  
Max  
0.51  
1.40  
2.50  
1.05  
0.61  
2.05  
3.05  
0.15  
1.10  
0.61  
0.178  
A
B
C
TOP VIEW  
B
C
D
Mechanical Data  
E
D
·
·
Case: SOT-23, Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagrams  
Approx. Weight: 0.008 grams  
E
G
H
G
H
J
·
·
M
K
K
J
L
L
M
All Dimensions in mm  
BAS70-06 Marking: K76, K7F  
BAS70-04 Marking: K74, K7D  
BAS70-05 Marking: K75, K7E  
BAS70 Marking: K73, K7C  
Maximum Ratings and Electrical Characteristics, Single Diode @ T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
BAS70  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
70  
V
VR(RMS)  
IF  
RMS Reverse Voltage  
49  
70  
V
Forward Continuous Current (Note 1)  
Non-Repetitive Peak Forward Surge Current @ tp < 1.0s  
Power Dissipation (Note 1)  
mA  
mA  
mW  
K/W  
°C  
IFSM  
Pd  
100  
200  
RqJA  
Tj  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating Junction Temperature Range  
Storage Temperature Range  
625  
-55 to +125  
-65 to +150  
TSTG  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Ratings  
Characteristic  
Symbol  
V(BR)R  
Min  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage (Note 2)  
tp <300µs, IF = 1.0mA  
tp <300µs, IF = 15mA  
410  
1000  
VF  
Forward Voltage  
mV  
IRM  
Cj  
tp < 300µs, VR = 50V  
VR = 0V, f = 1.0MHz  
Peak Reverse Current  
Junction Capacitance  
¾
¾
100  
2.0  
nA  
pF  
IF = IR = 10mA to IR = 1.0mA,  
RL =100W  
trr  
Reverse Recovery Time  
5.0  
ns  
Notes:  
1. Valid Provided that terminals are kept at ambient temperature.  
2. Test period <3000ms.  
DS11007 Rev. L-2  
1 of 1  
BAS70/-04/-05/-06  

与BAS70-06相关器件

型号 品牌 获取价格 描述 数据表
BAS70-06,215 NXP

获取价格

BAS70 series; 1PS7xSB70 series - General-purpose Schottky diodes TO-236 3-Pin
BAS70-06/G,215 NXP

获取价格

BAS70 series; 1PS7xSB70 series - General-purpose Schottky diodes TO-236 3-Pin
BAS70-06/T1 ETC

获取价格

DIODE SCHOTTKY DUAL
BAS70-06212 NXP

获取价格

DIODE 0.07 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
BAS70-06235 NXP

获取价格

DIODE 0.07 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
BAS70-06-7 DIODES

获取价格

Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3
BAS70-06-7-F NXP

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70-06-7-F DIODES

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70-06B5000 ROCHESTER

获取价格

0.07 A, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3 PIN
BAS70-06B5003 INFINEON

获取价格

Rectifier Diode, Schottky, 2 Element, 0.07A, Silicon, SOT-23, 3 PIN