BAS70-06

更新时间： 2024-09-26 12:50:27

品牌	Logo	应用领域
鲁光 - LGE		小信号肖特基二极管
页数	文件大小	规格书
2页	159K
描述
200mW Surface Mount Schottky Barrier Diode

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中文翻译

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技术参数
数据手册

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BAS70-06 技术参数

Case Style：	SOT-23	IF(A)：	70
VRRM (V)：	70	IFSM (A)：	0.1
VF (V)：	1.0	@ IF (A)：	15
Maximum reverse current：	10	TRR(nS)：
class：	Diodes

BAS70-06 数据手册

BAS70/-04/05/06

200mW Surface Mount Schottky Barrier Diode

SOT-23

0.020(0.51)

0.015(0.37)

0.055(1.40) 0.098(2.50)

0.047(1.19) 0.083(2.10)

Features

ꢀ

Low turn-on voltage

0.041(1.05)

Fast switching

0.080(2.05)

0.070(1.78)

0.024(0.61)

0.018(0.45)

0.047(0.89)

PN junction guard Ring for transient

0.120(3.05)

0.104(2.65)

Mechanical Data

0.043(1.10)

0.035(0.89)

ꢀ

Case: SOT-23, Molded plastic

Weight: 0.008 grams

ꢀ

0.007(0.178)

0.003(0.076)

0.006(0.15)

0.001(0.013)

0.024(0.61)

0.018(0.45)

Dimensions in inches and (millimeters)

BAS70Marking:73

BAS70-04Marking:74

BAS70-05Marking:75

BAS70-06Marking:76

Maximum Ratings TA=25 ^oC unless otherwise specified

Type Number

Symbol

BAS70

Units

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRWM

RMS Reverse Voltage

R(RMS)

Forward Continuous Current (Note 1)

Non-Repetitive Peak Forward Surge Current

100

200

625

K/W

^oC

IFSM

@ t ≦1.0s

Power Dissipation (Note 1)

Thermal Resistance Junction to Ambient Air

(Note 1)

θJA

Operating Junction Temperature Range

Storage Temperature Range

-55 to + 125

-65 to + 150

T_J

T_STG

Electrical Characteristics

Type Number

Symbol

Min

Max

Units

Reverse Breakdown Voltage (Note 2), IR=10uA

(BR)

Reverse Leakage Current tp<300us, VR=50V

100

410

1000

2.0

Forward Voltage Drop

tp=300us, IF=1.0mA

tp<300us, IF=15mA

Junction Capacitance VR=0, f=1.0MHz

Reverse Recovery Time (Note 3)

trr

5.0

Notes:

1. Valid Provided that Terminals are Kept at Ambient Temperature.

2. Test Period < 3000uS.

3. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=1.0mA, RL=100Ω.

http://www.luguang.cn

mail:lge@luguang.cn

中文翻译

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