Datasheet > BAS70-05

BAS70-05

更新时间： 2024-09-18 12:33:19

品牌	Logo	应用领域
TYSEMI		二极管光电二极管
页数	文件大小	规格书
1页	87K
描述
Low forward current High breakdown voltage Guard ring protected Low diode capacitance.

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BAS70-05 数据手册

Product specification

BAS70 series

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low forward current

High breakdown voltage

Guard ring protected

Small plastic SMD package

Low diode capacitance.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Continuous reverse voltage

Continuous forward current

Repetitive peak forward current

Non-repetitive peak forward current

Storage temperature

Symbol

V^R

Conditions

Min

Max

Unit

I^F

I^FRM

I^FSM

T^stg

T^j

1 s; ä

0.5

tp < 10 ms

100

+150

150

+150

500

-65

Junction temperature

Operating ambient temperature

thermal resistance from junction to ambient

T^amb

R^{th j-a}

K/W

Electrical Characteristics Ta = 25

Parameter

Symbol

V^F

Conditions

I^F= 1 mA

I^F= 10 mA

I^F= 15 mA

Max

410

750

Unit

Forward voltage

V^R= 50 V; note 1

V^R= 70 V; note 1

I^F= 5 mA

100

Reverse voltage leakage current

I^R

Charge carrier life time (Krakauer method)

100

Diode capacitance

Note

C^d

f = 1 MHz; V^R= 0;

1. Pulse test: t^p= 300

s; ä = 0.02

Marking

Type

BAS70

73*

BAS70-04

74*

BAS70-05

75*

BAS70-06

76*

BAS70-07

77p

Marking

http://www.twtysemi.com

sales@twtysemi.com

1 of 1

4008-318-123

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