Datasheet > BAS70-05

BAS70-05

更新时间： 2024-09-18 06:41:27

品牌	Logo	应用领域
SECOS		二极管光电二极管
页数	文件大小	规格书
2页	87K
描述
Surface Mount Schottky Barrier Diodes

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中文翻译

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数据手册

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BAS70-05 数据手册

BAS70/-04/-05/-06

Surface Mount Schottky Barrier Diodes

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SOT-23

Min

FEATURES

Dim

Max

Low Turn-on Voltage

Low Forward Voltage - 0.75V(Max) @ I

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

F = 10 mA

Very Low Capacitance - Less Than 2.0pF @ 0V

For high speed switching application, circuit protection

Top View

MECHANICAL DATA

Case: SOT-23, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: See Diagrams Below

Weight: 0.008 grams (approx.)

Mounting Position: Any

All Dimension in mm

BAS70-06 Marking: K76, 76

BAS70-05 Marking: K75, 75

BAS70 Marking: K73, BE, 73

BAS70-04 Marking: K74, 74

MAXIMUM RATINGS (T = 150^OC unless otherwise noted)

Rating

Reverse Voltage

Symbol

Value

Unit

Volts

Forward Power Dissipation

@ T = 25°C

225

1.8

Derate above 25°C

mW/5C

Operating Junction and Storage Temperature Range

Forward Continuous Current

±55 to +150

J, stg

Single Forward Current

t v 10 m

IFSM

100

ELECTRICALCHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

—

Unit

Reverse Breakdown Voltage (I = 10 µA)

Volts

(BR)R

Total Capacitance (V = 0 V, f = 1.0 MHz)

—

2.0

Reverse Leakage (V = 50 V)

(V = 70 V)

—

0.1

µAdc

Forward Voltage (I = 1.0 mAdc)

—

410

750

1.0

mVdc

Vdc

Forward Voltage (I = 10 mAdc)

Forward Voltage (I = 15 mAdc)

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individua

01-Jun-2002 Rev. A

Page 1 of 2

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BAS70-05-7-F	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
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BAS70-05B5000	INFINEON	获取价格	Rectifier Diode, Schottky, 2 Element, 0.07A, Silicon, SOT-23, 3 PIN
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