Datasheet > BAS416V

BAS416V

更新时间： 2024-06-27 12:13:12

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
7页	491K
描述
Reverse Voltage Vr : 75 V;Forward Current Io : 140 mA;Max Surge Current : 4.0 A;Forward Voltage Vf : 1.25 V;Reverse Current Ir : 0.005 uA;Recovery Time : 3000 ns;Package / Case : SOD-323;Mounting Style : SMT/SMD;Notes : IFSM@t = 1.0us;Certified (AEC-Q101...etc) : AEC-Q101

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BAS416V 数据手册

BAS416V

Low-leakage double diode

SOD-323

FEATURES

• Plastic SMD package

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 μs

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:max. 500 mA.

e.g:BAS416V

• P/N suffix V means AEC-Q101 qualified,

• P/N suffix V means Halogen-free

Marking:S4

APPLICATION

• Low-leakagecurrentapplicationsin

surface mounted circuits.

DESCRIPTION

Epitaxial, medium-speed switching,

connected in series.

double diode in a small SOD323 plastic SMD package. The diodes are

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

Per diode

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_RRM

V_R

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

−

I_F

single diode loaded; note 1; see Fig.2

double diode loaded; note 1; see Fig.2

160

140

500

I_FRM

I_FSM

repetitive peak forward current

non-repetitive peak forward

current

square wave; T_j= 25 °C prior to surge;

see Fig.4

t_p= 1 μs

−

t_p= 1 ms

t_p= 1 s

0.5

250

+150

150

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

T_amb= 25 °C; note 1

°C

−65

−

2020-11/79

REV:O

Note

1. Device mounted on a FR4 printed-circuit board.

12 3 4 5 6 7

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