Datasheet > BAS416F

BAS416F

更新时间： 2024-11-28 22:04:11

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
10页	195K
描述
DIODE GEN PURP 75V 200MA SOD323

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中文翻译

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BAS416F 数据手册

BAS416

Low-leakage diode

2 October 2020

Product data sheet

1. General description

Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small

SOD323 SMD plastic package.

2. Features and benefits

•

Plastic SMD package

•

Low leakage current: typ. 3 pA

Switching time: typ. 0.8 us

Continuous reverse voltage: max. 75 V

Repetitive peak reverse voltage: max. 85 V

Repetitive peak forward current: max. 500 mA.

AEC-Q101 qualified

3. Applications

•

Low-leakage current applications in surface mounted circuits.

4. Quick reference data

Table 1. Quick reference data

Symbol

I_F

Parameter

Conditions

Min

Typ

Max

200

Unit

forward current

T_j= 25 °C

V_RRM

repetitive peak reverse

voltage

V_F

I_R

forward voltage

reverse current

I_F= 50 mA; T_j= 25 °C

1.1

V_R= 75 V; pulsed; T_j= 25 °C

0.003

0.8

µs

t_rr

reverse recovery time I_F= 10 mA; I_R= 10 mA; R_L= 100 Ω;

I_R(meas)= 1 mA; T_j= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode

Simplified outline

Graphic symbol

anode

aaa-032142

SOD323

12 3 4 5 6 7...10

中文翻译

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