Datasheet > BAS416-T

BAS416-T

更新时间： 2024-11-28 19:44:19

品牌	Logo	应用领域
RECTRON		二极管
页数	文件大小	规格书
7页	475K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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BAS416-T 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.68	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

BAS416-T 数据手册

BAS416

Low-leakage double diode

SOD-323

FEATURES

• Plastic SMD package

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 μs

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:max. 500 mA.

• P/N suffix V means AEC-Q101 qualified,

e.g:BAS416V

• P/N suffix V means Halogen-free

Marking:S4

APPLICATION

• Low-leakagecurrentapplicationsin

surface mounted circuits.

DESCRIPTION

Epitaxial, medium-speed switching,

connected in series.

double diode in a small SOD323 plastic SMD package. The diodes are

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

Per diode

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_RRM

V_R

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

−

I_F

single diode loaded; note 1; see Fig.2

double diode loaded; note 1; see Fig.2

160

140

500

I_FRM

I_FSM

repetitive peak forward current

non-repetitive peak forward

current

square wave; T_j= 25 °C prior to surge;

see Fig.4

t_p= 1 μs

−

t_p= 1 ms

t_p= 1 s

0.5

250

+150

150

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

T_amb= 25 °C; note 1

°C

−65

−

2019-03/79

REV:O

Note

1. Device mounted on a FR4 printed-circuit board.

12 3 4 5 6 7

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与BAS416-T相关器件

型号	品牌	获取价格	描述	数据表
BAS416V	RECTRON	获取价格	Reverse Voltage Vr : 75 V;Forward Current Io : 140 mA;Max Surge Current : 4.0 A;Forward Vo
BAS416W	BL Galaxy Electrical	获取价格	0.2A,75V,Surface Mount Small Signal Switching Diodes
BAS416Z	ETC	获取价格	DIODE GEN PURP 75V 200MA SOD323
BAS45A	NXP	获取价格	Low-leakage diode
BAS45A	NEXPERIA	获取价格	Low-leakage diodeProduction
BAS45A,113	ETC	获取价格	DIODE GEN PURP 125V 250MA DO34
BAS45A,133	NXP	获取价格	BAS45A - Low-leakage diode DO-34 2-Pin
BAS45A,143	ETC	获取价格	DIODE GEN PURP 125V 250MA DO34
BAS45A/A52A	NXP	获取价格	DIODE 0.25 A, 125 V, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signa
BAS45AL	NXP	获取价格	Low-leakage diode