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BAS416-Q PDF预览

BAS416-Q

更新时间: 2024-11-29 11:11:51
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安世 - NEXPERIA /
页数 文件大小 规格书
9页 189K
描述
Low-leakage switching diodeProduction

BAS416-Q 数据手册

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BAS416-Q  
Low-leakage switching diode  
18 April 2023  
Product data sheet  
1. General description  
Epitaxial, medium-speed switching diode with a low-leakage current encapsulated in a small  
SOD323 SMD plastic package.  
2. Features and benefits  
Plastic SMD package  
Low leakage current: typ. 3 pA  
Switching time: typ. 0.8 us  
Continuous reverse voltage: max. 75 V  
Repetitive peak reverse voltage: max. 85 V  
Repetitive peak forward current: max. 500 mA  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Low-leakage current applications in surface mounted circuits  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
IF  
Parameter  
Conditions  
Min  
Typ  
Max  
200  
85  
Unit  
mA  
V
forward current  
Tj = 25 °C  
-
-
-
-
VRRM  
repetitive peak reverse  
voltage  
VF  
IR  
forward voltage  
reverse current  
IF = 50 mA; Tj = 25 °C  
-
-
-
-
1.1  
5
V
VR = 75 V; pulsed; Tj = 25 °C  
0.003  
0.8  
nA  
µs  
trr  
reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;  
IR(meas) = 1 mA; Tj = 25 °C  
3
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
cathode  
Simplified outline  
Graphic symbol  
K
A
1
2
K
A
2
anode  
aaa-032142  
SOD323  
 
 
 
 
 

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