Datasheet > BAS416

BAS416

更新时间： 2024-06-27 12:13:48

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	320K
描述
Low-leakage Diode

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中文翻译

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数据手册

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BAS416 数据手册

SMD Type

Diodes

Low-leakage Diode

BAS416

SOD-323

Ƶ Features

ƽ Plastic SMD package

ƽ Low leakage current: typ. 3 pA

ƽ Switching time: typ. 0.8 ȝs

ƽ Continuous reverse voltage: max. 75 V

ƽ Repetitive peak reverse voltage: max. 85 V

Top View

PIN DESCRIPTION

ƽ Repetitive peak forward current: max. 500 mA.

DESCRIPTION

Cathode

Anode

Ƶ Absolute Maximum Ratings (T

=25ć unless otherwise noted)

Parameter

Repetitive Peak Reverse Voltage

Continuous Reverse Voltage

Symbol

Rating

Unit

RRM

Continuous Forward Current (see Fig.1)

Repetitive Peak Forward Current

Non-Repetitive Peak Forward Current

200

500

FRM

(Square Wave, TJ = 25°C prior to surge,see Fig.3)

IFSM

t = 1 μs

t = 1 ms

t = 1 s

0.5

Total Device Dissipation (Note 1)

Thermal Resistance Junction to Ambient

Junction Temperature

tot

250

RɽJA

450

ć/W

150

Storage Temperature range

Tstg

-55 to 150

Note 1. Device mounted on an FR4 printed-circuit board.

Ƶ Electrical Characteristics (T

= 25°C unless otherwise noted)

Symbol Test Conditions

Parameter

Min

Typ

Max

Unit

= 1 mA

0.9

= 10 mA

= 50 mA

F= 150 mA

Forward voltage (see Fig.2)

1.1

1.25

= 75 V

= 75 V, T

= 0 V, f= 1 MHz

0.003

Reverse voltage leakage current

(see Fig.4)

= 150ć

Diode Capacitance (see Fig.5)

when switched from IF = 10 mA to

Reverse recovery time (see Fig.6)

= 10 mA; R

= 100 ȍ;

0.8

μs

measured at I

= 1 mA;

Ƶ Marking

Marking

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