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BAS40LT1 PDF预览

BAS40LT1

更新时间: 2024-10-28 22:50:19
品牌 Logo 应用领域
乐山 - LRC 肖特基二极管光电二极管
页数 文件大小 规格书
2页 45K
描述
Schottky Barrier Diode

BAS40LT1 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.76配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.38 V
元件数量:1最高工作温度:150 °C
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
Base Number Matches:1

BAS40LT1 数据手册

 浏览型号BAS40LT1的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
Schottky Barrier Diode  
BAS40LT1  
These Schottky barrier diodes are designed  
for high speed switching applications, circuit  
protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Min-  
iature surface mount package is excellent for  
hand held and portable applications where  
space is limited.  
3
1
2
CASE 318–08, STYLE 11  
SOT–23 (TO–236AB)  
40V SCHOTTKY BARRIER DIODES  
*
ANODE  
CATHODE  
1
3
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)  
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
VR  
PF  
40  
Volts  
Forward Power Dissipation  
@ TA = 25°C  
225  
1.8  
mW  
Derate above 25°C  
Operating Junction and Storage  
Temperature Range  
mW/°C  
TJ, Tstg  
–55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)  
Characteristic  
Symbol  
Min  
Max  
Unit  
Reverse Breakdown Voltage (IR = 10 µA)  
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)  
Reverse Leakage (VR = 25 V)  
V(BR)R  
CT  
IR  
40  
Volts  
pF  
5.0  
1.0  
380  
500  
1.0  
µAdc  
mVdc  
mVdc  
Vdc  
Forward Voltage (IF = 0.1 mAdc)  
Forward Voltage (IF = 30 mAdc)  
VF  
VF  
Forward Voltage (IF = 100 mAdc)  
VF  
BAS40LT1–1/2  

BAS40LT1 替代型号

型号 品牌 替代类型 描述 数据表
BAS40LT1G ONSEMI

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