Datasheet > BAS40HE3

BAS40HE3

更新时间： 2024-11-20 14:53:59

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	457K
描述
Tape : 3K/Reel, 120K/Ctn;

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BAS40HE3 数据手册

BAS40HE3

Features

• Halogen Free. "Green" Device (Note 1)

• AEC-Q101 Qualified

• Low Forward Voltage and Reverse Recovery Characteristics

• Epoxy Meets UL 94 V-0 Flammability Rating

• Moisture Sensitivity Level 1

• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

200mW,40V

Schottky Barrier

Diode

Maximum Ratings

• Operating Junction Temperature Range: -55°C to +125°C

• Storage Temperature Range: -55°C to +150°C

• Thermal Resistance: 500°C /W Junction to Ambient

Maximum

Maximum DC

Blocking

MCC

Device

Recurrent

Peak Reverse

Voltage

Part Number

Marking

Voltage

SOT-23

BAS40HE3

40V

BAS40-04HE3

BAS40-05HE3

BAS40-06HE3

Electrical Characteristics @ 25°C Unless Otherwise Speciﬁed

Average Forward

Current

I_F(AV)

I_FSM

P_d

200mA

600mA

200mW

25°C

Peak Forward Surge

Current

tp<1s, Ta=25°C

T_A= 25 °C

Power Dissipation

DIMENSIONS

INCHES

DIM

NOTE

MIN MAX MIN MAX

0.110 0.120 2.80 3.04

0.083 0.104 2.10 2.64

0.047 0.055 1.20 1.40

0.034 0.041 0.85 1.05

0.067 0.083 1.70 2.10

0.018 0.024 0.45 0.60

380mV

I_F=1.0mA

I_F=40mA

Maximum

Forward Voltage

V_F

1000mV

DC Reverse Current

at Rated DC Blocking

Voltage

10 nA(TYP)

200nA(MAX)

tp < 300μs,V_R= 30V

I_R=10µA

I_R

0.01 0.15

0.0004 0.006

0.035 0.043 0.90 1.10

0.003 0.007 0.08 0.18

0.012 0.020 0.30 0.51

Min Reverse

Breakdown Voltage

V_BR

C_T

t_rr

40V

5pF

0.020

0.50

0.007

0.20

Typical Junction

Capacitance

Measured at

1.0MHz, V_R=0.0V

Suggested Solder Pad Layout

0.031

0.800

Maximum Reverse

Recovery Time

I_rr=1mA, I_R=I_F=10mA

R_L=100Ω

5.0ns

0.035

0.900

Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

0.079

2.000

inches

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Internal Structure:

0.037

0.950

0.037

0.950

BAS40-05HE3

BAS40-06HE3

BAS40-04HE3

BAS40HE3

Rev.3-3-12012020

1/3

MCCSEMI.COM

12 3

中文翻译

下载PDF

与BAS40HE3相关器件

型号	品牌	获取价格	描述	数据表
BAS40HP	SWST	获取价格	肖特基二极管
BAS40H-Q	NEXPERIA	获取价格	General-purpose Schottky diodeProduction
BAS40HY	ROHM	获取价格	BAS40HY适用于小电流整流用途，是低VF的肖特基势垒二极管。采用非常普遍的SOT-23
BAS40HYFH	ROHM	获取价格	BAS40HYFH适用于小电流整流用途，是低VF的肖特基势垒二极管。采用非常普遍的SOT-
BAS40L	WTE	获取价格	General-purpose Schottky diodes
BAS40L	NXP	获取价格	Schottky barrier diode
BAS40L	ONSEMI	获取价格	Schottky Barrier Diodes
BAS40L	NEXPERIA	获取价格	General-purpose Schottky diodeProduction
BAS40L	VISHAY	获取价格	Small Signal Schottky Diode
BAS40L	BL Galaxy Electrical	获取价格	0.2A,40V,Surface Mount Small Signal Schottky Diodes