Datasheet > BAS40DDE

BAS40DDE

更新时间： 2024-11-25 14:53:07

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	123K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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BAS40DDE 数据手册

BAS40DDE

Surface Mount Schottky Barrier Diode

Features

• Low leakage current

• Low capacitance

• High switching speed

• High breakdown voltage

1. Anode 2. NC 3.Cathode

4. Anode 5. NC 6.Cathode

SOT-563 Plastic Package

Applications

• Ultra high-speed switching

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

I_F(AV)

I_FSM

Value

Unit

Repetitive Peak Reverse Voltage

Average Rectified Forward Current

Peak Forward Surge Current (at tp = 10 ms)

Junction Temperature

℃

200

T_j

125

T_stg

Storage Temperature Range

- 55 to + 150

℃

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 1 mA

at I_F= 40 mA

V_F

0.38

Reverse Current

at V_R= 30 V

at V_R= 40 V

I_R

µA

Total Capacitance

at V_R= 0 V, f = 1 MHz

C_tot

1 / 3

Dated : 10/02/2023 Rev:01

12 3

中文翻译

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与BAS40DDE相关器件

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BAS40DW	SWST	获取价格	肖特基二极管
BAS40DW-04	MCC	获取价格	200mW SCHOTTKY BARRIER Diode
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BAS40DW-04	BL Galaxy Electrical	获取价格	0.2A,40V,Surface Mount Small Signal Schottky Diodes
BAS40DW-04	RECTRON	获取价格	Reverse Voltage Vr : 40 V;Forward Current Io : 0.2 A;Forward Voltage Vf : 1.0 V;Reverse Cu
BAS40DW-04-13	DIODES	获取价格	Rectifier Diode, Schottky, 4 Element, 0.2A, 40V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACK
BAS40DW-04-7	DIODES	获取价格	暂无描述
BAS40DW-04-7-F	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
BAS40DW-04P	MCC	获取价格	DIODE 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC PACKAGE-6, Signa
BAS40DW-04-T	MCC	获取价格	Diode,