Datasheet > BAS40BDWPTGP

BAS40BDWPTGP

更新时间： 2024-11-20 19:23:39

品牌	Logo	应用领域
力勤 - CHENMKO		/
页数	文件大小	规格书
2页	184K
描述
Diode,

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中文翻译

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技术参数
数据手册

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BAS40BDWPTGP 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.84
Base Number Matches：	1

BAS40BDWPTGP 数据手册

CHENMKO ENTERPRISE CO.,LTD

BAS40BDWPT

SURFACE MOUNT

SCHOTTKY DIODE ARRAY

VOLTAGE 40 Volts CURRENT 0.2 Ampere

APPLICATION

* Ultra high speed switching

FEATURE

* Small surface mounting type. (SC-88/SOT-363)

* High speed. (TRR=2.5nSec Typ.)

SC-88/SOT-363

* Suitable for high packing density.

* Maximum total power disspation is 200mW.

* Peak forward current is 300mA.

(1)

(6)

* Schottky diode array ( Dual common cathode ).

0.65

1.2~1.4

2.0~2.2

CONSTRUCTION

* Silicon epitaxial planar

WEIGHT

(3)

(4)

0.15~0.35

1.15~1.35

* 0.008 grams ( Approx.)

MARKING

* BD2

0.08~0.15

0.8~1.1

0~0.1

0.1 Min.

2.15~2.45

CIRCUIT

SC-88/SOT-363

Dimensions in millimeters

RATINGS

SYMBOL

VRRM

VRMS

VDC

BAS40BDWPT

UNITS

Volts

Amps

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

0.2

Maximum Average Forward Rectified Current

Peak Forward Surge Current at 1Sec.

IFSM

0.6

Typical Junction Capacitance between Terminal (Note 1)

Maximum Reverse Recovery Time (Note 2)

Maximum Operating Temperature Range

TRR

5.0

nSec

^oC

-55 to +125

^oC

Storage Temperature Range

TSTG

-65 to +150

ELECTRICAL CHARACTERISTICS ( At TA = 25^oC unless otherwise noted )

CHARACTERISTICS

Maximum Instantaneous Forward Voltage

Maximum Average Reverse Current at VR= 30V

SYMBOL

UNITS

mVolts

BAS40BDWPT

@IF= 1.0mA

@IF= 40mA

380

1000

200

nAmps

2004-06

NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0.0 volts.

2. Measured at applied froward current of 10mA and reverse current of 10mA.

3. ESD sensitive product handling required.

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