BAS40

更新时间： 2024-02-08 10:16:56

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管光电二极管
页数	文件大小	规格书
2页	157K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册
替代型号

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BAS40 数据手册

BAS40/ -04/ -05/ -06

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Forward Voltage Drop

Fast Switching

PN Junction Guard Ring for Transient and

ESD Protection

SOT-23

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.85

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.80

8°

Mechanical Data

TOP VIEW

Case: SOT-23, Molded Plastic

Case material - UL Flammability Rating

Classification 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: See Diagram Below

Weight: 0.008 grams (approx.)

Marking Code: See Diagrams Below & Page 2

Ordering Information: See Page 2

All Dimensions in mm

BAS40 Marking: K43

BAS40-04 Marking: K44

BAS40-05 Marking: K45

BAS40-06 Marking: K46

Maximum Ratings ^{@ T}_A= 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

I_FM

P_d

Forward Continuous Current (Note 1)

Power Dissipation (Note 1)

200

350

°C/W

°C

I_FSM

Forward Surge Current (Note 1)

@ t < 1.0s

600

qJA

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating Temperature Range

357

T_j

-55 to +125

-65 to +150

T_STG

°C

Storage Temperature Range

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol Min

Typ

Max

Unit

Test Condition

V_(BR)R

I_R= 10mA

Reverse Breakdown Voltage (Note 2)

—

t_p< 300ms, I_F= 1.0mA

t_p< 300ms, I_F= 40mA

380

1000

V_F

—

Forward Voltage (Note 2)

—

I_R

Reverse Leakage Current (Note 2)

Total Capacitance

t_p< 300ms, V_R= 30V

—

200

5.0

V_R= 0V, f =1.0MHz

C_T

—

4.0

I_F= I_R= 10mA to I_R= 1.0mA,

R_L= 100W

t_rr

Reverse Recovery Time

—

5.0

Note:

1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website

at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

DS11006 Rev. 12 - 2

1 of 2

BAS40 /-04 /-05 /-06

中文翻译

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BAS40 替代型号

型号	品牌	替代类型	描述	数据表
BAS40-7-F	DIODES	功能相似	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40	INFINEON	功能相似	HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose d
BAS40	NXP	功能相似	Schottky barrier double diodes

与BAS40相关器件

型号	品牌	获取价格	描述	数据表
BAS40-	INFINEON	获取价格	Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protectio
BAS40(-04/-05/-06)	RECTRON	获取价格	Reverse Voltage Vr : 40 V;Forward Current Io : 0.2 A;Forward Voltage Vf : 0.38 V;Reverse C
BAS40,215	ETC	获取价格	DIODE SCHOTTKY 40V 120MA SOT23
BAS40,235	ETC	获取价格	DIODE SCHOTTKY 40V 120MA SOT23
BAS40/04/05/06	ETC	获取价格	Schottky barrier diodes
BAS40/DG/B2,215	ETC	获取价格	DIODE SCHOTTKY 40V 120MA TO236AB
BAS40/E8	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, TO-236AB
BAS40/E9	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, TO-236AB
BAS40/G,215	NXP	获取价格	BAS40 series; 1PSxxSB4x series - General-purpose Schottky diodes TO-236 3-Pin
BAS40/ZLR	ETC	获取价格	DIODE SCHOTTKY 40V 120MA TO236AB

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