Datasheet > BAS40

BAS40

更新时间： 2023-12-06 20:03:52

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	303K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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BAS40 数据手册

BAS40 / -04 / -05 / -06

Surface Mount Schottky Barrier Diodes

Features

• Low forward voltage

• Fast switching

BAS40

BAS40-04

BAS40-05

BAS40-06

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

V_R

Value

Unit

Repetitive Peak Reverse Voltage

DC Blocking Voltage

I_F

Forward Continuous Current

Peak Forward Surge Current (at tp < 1 s)

Junction Temperature

200

℃

I_FSM

T_j

600

150

T_stg

Storage Temperature Range

- 55 to + 150

℃

Thermal Resistance

Parameter

Symbol

R_θJA

Value

500

Unit

Typical Thermal Resistance Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 10 μA

Forward Voltage

at I_F= 1 mA

at I_F= 40 mA

Reverse Current

at V_R= 30 V

V_F

380

1000

I_R

200

Reverse Recovery Time

from I_F= 10 mA through I_R= 10 mA to I_R= 1 mA

t_rr

Total Capacitance

at V_R= 0 V, f = 1 MHz

C_T

1 / 3

Dated: 28/10/2022 Rev: 04

12 3

中文翻译

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