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BAS40-06 PDF预览

BAS40-06

更新时间: 2024-11-25 14:53:55
品牌 Logo 应用领域
先科 - SWST 肖特基二极管
页数 文件大小 规格书
3页 303K
描述
肖特基二极管

BAS40-06 数据手册

 浏览型号BAS40-06的Datasheet PDF文件第2页浏览型号BAS40-06的Datasheet PDF文件第3页 
BAS40 / -04 / -05 / -06  
Surface Mount Schottky Barrier Diodes  
Features  
• Low forward voltage  
• Fast switching  
BAS40  
3
BAS40-04  
3
BAS40-05  
3
BAS40-06  
3
SOT-23 Plastic Package  
1
2
1
2
1
2
1
2
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
VRRM  
VR  
Value  
Unit  
V
Repetitive Peak Reverse Voltage  
DC Blocking Voltage  
40  
40  
V
IF  
Forward Continuous Current  
Peak Forward Surge Current (at tp < 1 s)  
Junction Temperature  
200  
mA  
mA  
IFSM  
Tj  
600  
150  
Tstg  
Storage Temperature Range  
- 55 to + 150  
Thermal Resistance  
Parameter  
Symbol  
RθJA  
Value  
500  
Unit  
Typical Thermal Resistance Junction to Ambient 1)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
/W  
Characteristics at Ta = 25℃  
Parameter  
Symbol  
V(BR)R  
Min.  
40  
Max.  
-
Unit  
Reverse Breakdown Voltage  
V
at IR = 10 μA  
Forward Voltage  
at IF = 1 mA  
at IF = 40 mA  
Reverse Current  
at VR = 30 V  
VF  
VF  
-
-
380  
1000  
mV  
mV  
IR  
-
-
-
200  
5
nA  
ns  
pF  
Reverse Recovery Time  
from IF = 10 mA through IR = 10 mA to IR = 1 mA  
trr  
Total Capacitance  
at VR = 0 V, f = 1 MHz  
CT  
5
1 / 3  
®
Dated: 28/10/2022 Rev: 04  

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