BAS40-04T

更新时间： 2024-09-13 08:48:23

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	171K
描述
150mW 40Volt Plastic-Encapsulate Diode

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中文翻译

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数据手册

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BAS40-04T 数据手册

M C C

BAS40-04T

BAS40-05T

BAS40-06T

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Pow Dissipation PD=150mW Tamb=25R

Forward Current I_F=200mA

Reverse Voltage V_R=40V

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

150mW 40Volt

Plastic-Encapsulate

Diode

•

Maximum Ratings

SOT-523

•

Operating Temperature: -65R to +150R

Storage Temperature: -65R to +150R

Electrical Characteristics @ 25°C Unless Otherwise Specified

Reverse Breakdown

Voltage

V_(BR)R

40V

I_R=10µA

Maximum

Instantaneous

Forward Voltage

380mV I_FM= 1mA;

V_F

1000mV

I_FM= 40mA;

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

DIMENSIONS

INCHES

I_R

200nA

V_R=30Volts

DIM

MIN

.059

.030

.057

MAX

.067

.033

.069

MIN

1.50

0.75

1.45

MAX

1.70

0.85

1.75

NOTE

Measured at

1.0MHz, V_R=0V

.020 Nominal

0.50Nominal

0.90

.000

.70

.100

.25

Total Capacitance

C_T

5pF

5nS

.035

.043

.004

.031

.008

.014

1.10

.000

.028

.004

.010

.100

0.80

.200

.35

I_F=I_R=10mA,

I_rr=1mA,R_L=100Ā

Reverse Recovery

Time

T_rr

www.mccsemi.com

Revision: A

2011/01/01

1 of 3

12 3

中文翻译

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BAS40-04-T	RECTRON	获取价格	Rectifier Diode, Schottky, 2 Element, 0.12A, Silicon, SMD, 3 PIN
BAS40-04T/R	NXP	获取价格	0.12A, 40V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3
BAS40-04T-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACK
BAS40-04T-13-F	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon,
BAS40-04T-7	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-04T-7-F	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40-04TP	MCC	获取价格	暂无描述
BAS40-04-TP	MCC	获取价格	Surface Mount Schottky Barrier Diode 200 mWatt
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