Datasheet > BAS40-04LT1/D

BAS40-04LT1/D

更新时间： 2024-01-16 11:58:21

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描述
Dual Series Schottky Barrier Diode

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BAS40-04LT1/D 数据手册

ON Semiconductort

BAS40-04LT1

Dual Series

Schottky Barrier Diode

ON Semiconductor Preferred Device

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

40 VOLTS

SCHOTTKY BARRIER DIODES

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.50 Volts (Typ) @ I = 10 mAdc

MAXIMUM RATINGS (T = 150°C unless otherwise noted)

Rating

Symbol

Value

Unit

Reverse Voltage

Volts

CASE 318–08, STYLE 11

SOT–23 (TO–236AB)

Forward Power Dissipation

@ T = 25°C

Derate above 25°C

225

1.8

mW/°C

Operating Junction and Storage

Temperature Range

–55 to +150

°C

J, stg

ANODE

CATHODE

CATHODE/ANODE

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

—

Max

—

Unit

Volts

Reverse Breakdown Voltage (I = 10 µA)

(BR)R

Total Capacitance (V = 1.0 V, f = 1.0 MHz)

5.0

1.0

380

500

1.0

Reverse Leakage (V = 25 V)

—

µAdc

mVdc

Vdc

Forward Voltage (I = 0.1 mAdc)

—

Forward Voltage (I = 30 mAdc)

—

Forward Voltage (I = 100 mAdc)

—

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 3

BAS40–04LT1/D

12 3 4

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