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BAS40-02V-V-G_15 PDF预览

BAS40-02V-V-G_15

更新时间: 2024-01-06 05:33:48
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威世 - VISHAY /
页数 文件大小 规格书
4页 77K
描述
Small Signal Schottky Diode

BAS40-02V-V-G_15 数据手册

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BAS40-02V-V-G  
Vishay Semiconductors  
www.vishay.com  
Small Signal Schottky Diode  
FEATURES  
• This diode features very low turn-on voltage  
and fast switching  
1
2
• This device is protected by a PN junction guard  
ring against excessive voltage, such as  
electrostatic discharges  
22321  
• Space saving SOD-523 package  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOD-523  
Weight: approx. 1.4 mg  
Molding compound flammability rating: UL 94 V-0  
Terminals: high temperature soldering guaranteed:  
260 °C/10 s at terminals  
Packaging codes/options:  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
INTERNAL CONSTRUCTION  
Single diode  
TYPE MARKING  
REMARKS  
BAS40-02V-V-G  
BAS40-02V-V-G-08  
.W  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Repetitive peak reverse voltage  
Forward continuous current  
Surge forward current  
VRRM  
IF  
40  
V
120  
600  
150  
mA  
mA  
mW  
IFSM  
Ptot  
Power dissipation  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Thermal resistance junction to ambient air  
Junction temperature  
RthJA  
Tj  
680  
125  
K/W  
°C  
Storage temperature range  
Tstg  
- 55 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
R = 10 μA (pulsed)  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Reverse breakdown voltage  
Leakage current  
I
V(BR)  
IR  
40  
V
Pulse test VR = 30 V, tp < 300 μs  
Pulse test tp < 300 μs, IF = 1 mA  
Pulse test tp < 300 μs, IF = 40 mA  
VR = 0 V, f = 1 MHz  
20  
100  
380  
1000  
5
nA  
mV  
mV  
pF  
ns  
VF  
Forward voltage  
VF  
Diode capacitance  
CD  
trr  
4
Reverse recovery time  
IF = 10 mA, IR = 10 mA, Irr = 1 mA, RL = 100  
5
Rev. 1.1, 15-May-12  
Document Number: 82391  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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