Datasheet > BAS321J

BAS321J

更新时间： 2024-09-27 11:12:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	190K
描述
High-voltage switching diodeProduction

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BAS321J 数据手册

BAS321J

High-voltage switching diode

23 March 2018

Product data sheet

1. General description

High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device

(SMD) plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 50 ns

•

Low leakage current: I_R≤ 100 nA

High reverse voltage V_R≤ 200 V

Low capacitance: C_d≤ 2 pF

Very small SMD plastic package

AEC-Q101 qualified

3. Applications

•

High-speed switching

General-purpose switching

Voltage clamping

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

I_F

Parameter

Conditions

Min

Typ

Max

250

200

250

Unit

forward current

reverse voltage

[1]

V_R

V_RRM

repetitive peak reverse

voltage

V_F

forward voltage

I_F= 200 mA; t_p≤ 300 µs; δ ≤ 0.02;

T_j= 25 °C

1.25

I_R

t_rr

reverse current

V_R= 200 V; pulsed; T_j= 25 °C

100

reverse recovery time I_F= 30 mA; I_R= 30 mA; R_L= 100 Ω;

I_R(meas)= 3 mA; T_j= 25 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

12 3 4 5 6 7...12

中文翻译

下载PDF

与BAS321J相关器件

型号	品牌	获取价格	描述	数据表
BAS321JF	ETC	获取价格	BAS321J/SOD323/SOD2
BAS321J-Q	NEXPERIA	获取价格	High-voltage switching diodeProduction
BAS321JX	ETC	获取价格	BAS321J/SOD323/SOD2
BAS321-Q	NEXPERIA	获取价格	General purpose diodeProduction
BAS321Z	ETC	获取价格	DIODE GEN PURP 200V 250MA SOD323
BAS32L	MCC	获取价格	High Speed Switching Diode
BAS32L	TYSEMI	获取价格	Small hermetically sealed glass SMD package High switching speed: max. 4 ns
BAS32L	NEXPERIA	获取价格	High-speed switching diodeProduction
BAS32L	NXP	获取价格	High-speed diode
BAS32L	SEMTECH	获取价格	HIGH SPEED DIODE