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BAS3005S02LRHE6327XTSA1 PDF预览

BAS3005S02LRHE6327XTSA1

更新时间: 2024-11-30 18:43:59
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
6页 793K
描述
Rectifier Diode,

BAS3005S02LRHE6327XTSA1 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:10 weeks风险等级:5.65
二极管类型:RECTIFIER DIODEJESD-609代码:e4
湿度敏感等级:1峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Gold (Au)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAS3005S02LRHE6327XTSA1 数据手册

 浏览型号BAS3005S02LRHE6327XTSA1的Datasheet PDF文件第2页浏览型号BAS3005S02LRHE6327XTSA1的Datasheet PDF文件第3页浏览型号BAS3005S02LRHE6327XTSA1的Datasheet PDF文件第4页浏览型号BAS3005S02LRHE6327XTSA1的Datasheet PDF文件第5页浏览型号BAS3005S02LRHE6327XTSA1的Datasheet PDF文件第6页 
BAS3005S-02LRH  
Low VF Schottky Diode  
Reverse voltage: 30 V  
Forward current: 0.5 A  
Low forward voltage and smallest package  
form factor (1.0 x 0.6 x < 0.4 mm) for  
mobile phone battery charger application  
Pb-free (RoHS compliant) package  
BAS3005S-02LRH  
1
2
Type  
BAS3005S-02LRH  
Package  
TSLP-2-17  
Configuration  
single  
Marking  
5A  
Maximum Ratings at T = 25 °C, unless otherwise specified  
A
Parameter  
Diode reverse voltage  
Forward current , T 132 °C  
Non-repetitive peak surge forward current  
(t 10 ms)  
Symbol  
V
R
I
F
I
FSM  
Value  
30  
0.5  
2
Unit  
V
A
1)  
1)  
S
150  
°C  
Junction temperature  
T
j
Operating temperature range  
Storage temperature  
T
-55 ...150  
-65 ...150  
op  
T
stg  
Thermal Resistance  
Junction - soldering point  
2)  
K/W  
R
60  
thJS  
1
For T > 25 °C the derating of V and I has to be considered.  
A
R
F
2
For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2011-06-20  
1

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