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BAS285-GS18 PDF预览

BAS285-GS18

更新时间: 2024-11-29 06:41:27
品牌 Logo 应用领域
威世 - VISHAY 信号二极管小信号肖特基二极管PC
页数 文件大小 规格书
5页 173K
描述
Small Signal Schottky Diode

BAS285-GS18 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:DO-213AA包装说明:O-LELF-R2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.68Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:570654
Samacsys Pin Count:2Samacsys Part Category:Schottky Diode
Samacsys Package Category:OtherSamacsys Footprint Name:QuadroMELF SOD-80
Samacsys Released Date:2019-02-23 17:54:58Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.24 VJEDEC-95代码:DO-213AA
JESD-30 代码:O-LELF-R2JESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:5 A
元件数量:1端子数量:2
最高工作温度:125 °C最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):250
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Silver (Sn/Ag)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:40Base Number Matches:1

BAS285-GS18 数据手册

 浏览型号BAS285-GS18的Datasheet PDF文件第2页浏览型号BAS285-GS18的Datasheet PDF文件第3页浏览型号BAS285-GS18的Datasheet PDF文件第4页浏览型号BAS285-GS18的Datasheet PDF文件第5页 
BAS285  
Vishay Semiconductors  
Small Signal Schottky Diode  
Features  
• Integrated protection ring against static  
discharge  
• Very low forward voltage  
• Lead (Pb)-free component  
e2  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
9612009  
Applications  
• Applications where a very low forward voltage is  
required  
Mechanical Data  
Case: QuadroMELF Glass case SOD80  
Weight: approx. 34 mg  
Cathode Band Color: Black  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box  
Parts Table  
Part  
Type differentiation  
VR = 30 V  
Ordering code  
Remarks  
BAS285  
BAS285-GS18 or BAS285-GS08  
Tape and Reel  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Reverse voltage  
Peak forward surge current  
Test condition  
Symbol  
VR  
Value  
30  
Unit  
V
tp = 10 ms  
IFSM  
IFRM  
IF  
5
A
Repetitive peak forward current tp 1 s  
Forward current  
300  
200  
200  
mA  
mA  
mA  
Average forward current  
IFAV  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
320  
Unit  
K/W  
Junction to ambient air  
on PC board  
50 mm x 50 mm x 1.6 mm  
Junction temperature  
Tj  
125  
°C  
°C  
Storage temperature range  
Tstg  
- 65 to + 150  
Document Number 85501  
Rev. 1.7, 17-Mar-06  
www.vishay.com  
1

BAS285-GS18 替代型号

型号 品牌 替代类型 描述 数据表
BAS85,115 NXP

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