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BAS285

更新时间: 2024-11-28 22:48:11
品牌 Logo 应用领域
威世 - VISHAY 肖特基二极管
页数 文件大小 规格书
4页 55K
描述
Schottky Barrier Diode

BAS285 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.58配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.8 V
最大非重复峰值正向电流:5 A元件数量:1
最高工作温度:125 °C最大输出电流:0.2 A
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
Base Number Matches:1

BAS285 数据手册

 浏览型号BAS285的Datasheet PDF文件第2页浏览型号BAS285的Datasheet PDF文件第3页浏览型号BAS285的Datasheet PDF文件第4页 
BAS285  
Vishay Telefunken  
Schottky Barrier Diode  
Features  
Integrated protection ring against  
static discharge  
Very low forward voltage  
Applications  
96 12009  
Applications where a very low forward voltage is  
required  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
30  
Unit  
V
V
R
Peak forward surge current  
Repetitive peak forward current t 1 s  
Forward current  
Average forward current  
Junction temperature  
Storage temperature range  
t = 10 ms  
I
I
5
300  
200  
200  
A
p
FSM  
FRM  
mA  
mA  
mA  
C
p
I
F
I
FAV  
T
125  
j
T
–65...+150  
C
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
on PC board 50mmx50mmx1.6mm  
Symbol  
Value  
320  
Unit  
K/W  
R
thJA  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =0.1mA  
Type  
Symbol Min  
Typ Max Unit  
V
F
V
F
V
F
V
F
V
F
240  
320  
400  
500  
800  
2.3  
mV  
mV  
mV  
mV  
mV  
A
F
I =1mA  
F
I =10mA  
F
I =30mA  
F
I =100mA  
F
Reverse current  
V =25V, t =300 s  
I
R
R
p
Diode capacitance  
V =1V, f=1MHz  
R
C
D
10  
pF  
Document Number 85501  
Rev. 3, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  

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