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BAS282GS08 PDF预览

BAS282GS08

更新时间: 2024-11-30 03:15:23
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 112K
描述
0.03A, 50V, SILICON, SIGNAL DIODE, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2

BAS282GS08 技术参数

生命周期:Obsolete零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknown风险等级:5.83
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LELF-R2元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.03 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:50 V
表面贴装:YES技术:SCHOTTKY
端子形式:WRAP AROUND端子位置:END

BAS282GS08 数据手册

 浏览型号BAS282GS08的Datasheet PDF文件第2页浏览型号BAS282GS08的Datasheet PDF文件第3页浏览型号BAS282GS08的Datasheet PDF文件第4页 
BAS281...BAS283  
Vishay Telefunken  
Small SIgnal Schottky Barrier Diodes  
Features  
Integrated protection ring against  
static discharge  
Low capacitance  
Low leakage current  
Low forward voltage drop  
Very low switching time  
96 12009  
Applications  
General purpose and switching Schottky barrier diode  
HF–Detector  
Protection circuit  
Diode for low currents with a low supply voltage  
Small battery charger  
Power supplies  
DC / DC converter for notebooks  
Order Instruction  
Type  
Type Differentiation  
V = 40 V  
Ordering Code  
Remarks  
BAS281  
BAS282  
BAS283  
BAS281–GS08  
BAS282–GS08  
BAS283–GS08  
Tape and Reel  
Tape and Reel  
Tape and Reel  
R
V = 50 V  
R
V = 60 V  
R
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
40  
50  
Unit  
V
BAS281  
BAS282  
BAS283  
V
R
60  
Peak forward surge current  
Repetitive peak forward current  
Forward current  
t =1s  
p
I
500  
150  
30  
125  
mA  
mA  
mA  
C
FSM  
I
FRM  
I
F
Junction temperature  
T
j
Storage temperature range  
T
stg  
–65...+150  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
on PC board 50 mmx50 mmx1.6 mm  
Symbol  
R
thJA  
Value  
320  
Unit  
K/W  
www.vishay.com  
1 (4)  
Document Number 85500  
Rev. 4, 31-Jan-01  

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