Datasheet > BAS28.215

BAS28.215

更新时间： 2024-11-29 12:52:55

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
12页	279K
描述
High-speed double diode

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BAS28.215 数据手册

BAS28

High-speed double diode

Rev. 3 — 22 July 2010

Product data sheet

1. Product profile

1.1 General description

Two high-speed switching diodes fabricated in planar technology, and encapsulated in a

small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not

connected.

1.2 Features and benefits

High switching speed: t_rr≤ 4 ns

Reverse voltage: V_R≤ 75 V

Repetitive peak reverse voltage: V_RRM≤ 85 V

Repetitive peak forward current: I_FRM≤ 500 mA

AEC-Q101 qualified

Small SMD package

1.3 Applications

High-speed switching in e.g. surface-mounted circuits

1.4 Quick reference data

Table 1.

Quick reference data

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Per diode

[1]

[2]

I_F

forward current

215

μA

I_R

V_R

t_rr

reverse current

V_R= 75 V

reverse voltage

reverse recovery time

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).

[2] When switched from I_F= 10 mA to I_R= 10 mA; R_L= 100 Ω; measured at I_R= 1 mA.

12 3 4 5 6 7...12

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