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BAS28 PDF预览

BAS28

更新时间: 2024-11-28 22:48:11
品牌 Logo 应用领域
CENTRAL 二极管开关
页数 文件大小 规格书
2页 52K
描述
DUAL, ISOLATED HIGH SPEED SWITCHING DIODE

BAS28 数据手册

 浏览型号BAS28的Datasheet PDF文件第2页 
TM  
BAS28  
Ce n t r a l  
S e m ic o n d u c t o r Co r p .  
DUAL, ISOLATED HIGH SPEED  
SWITCHING DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BAS28  
type is a ultra-high speed silicon switching  
diode manufactured by the epitaxial planar  
process, in an epoxy molded surface mount  
package with isolated dual diodes, designed  
for high speed switching applications.  
Marking code is A61.  
SOT-143 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=1 µsec.  
Forward Surge Current, tp=1 msec.  
Forward Surge Current, tp=1 sec.  
Power Dissipation  
V
V
I
75  
85  
250  
V
V
R
RRM  
F
mA  
mA  
mA  
mA  
mA  
mW  
I
I
I
I
250  
FRM  
FSM  
FSM  
FSM  
4000  
2000  
1000  
350  
P
D
Operating and Storage  
o
o
Junction Temperature  
Thermal Resistance  
T ,T  
J stg  
JA  
-65 to +150  
357  
C
C/W  
Θ
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =25V, T =150 C  
MIN  
MAX  
30  
1.0  
UNITS  
µA  
µA  
µA  
V
o
I
I
I
V
V
F
V
V
F
C
R
R
R
F
R
R
A
V =75V  
o
V =75V, T =150 C  
50  
R
A
I =1.0mA  
0.715  
0.855  
1.000  
1.250  
2.0  
6.0  
45  
1.75  
F
I =10mA  
F
V
V
V
pF  
ns  
pC  
V
I =50mA  
F
F
I =150mA  
F
V =0, f=1 MHz  
T
rr  
s
R
t
Q
V
I =I =10mA, R =100, Rec. to 1.0mA  
F R  
L
I =10mA, V =5.0V, R =500Ω  
F
R
L
I =10mA, t =20ns  
FR  
F
r
58  

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