Datasheet > BAS23

BAS23

更新时间： 2024-11-30 01:10:07

品牌	Logo	应用领域
南晶电子 - DGNJDZ		/
页数	文件大小	规格书
2页	4451K
描述
Fast Switching Speed

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中文翻译

获取价格

数据手册

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BAS23 数据手册

DONGGUAN NANJING ELECTRONICS LTD.,

SOT-23 Plastic-Encapsulate Diodes

SOT-23

BAS23/A/C/S ^{SWITCHING DIODE}

FEATURES

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

BAS23

BAS23A

BAS23C

BAS23S

Marking: JS

Marking:JS2

Marking:JS3

Marking: JS4

Maximum Ratings @Ta=25℃

Parameter

Symbol

Limit

250

Unit

Repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_R

Forward continuous current

Average rectified output current

I_FM

400

200

2.5

I_O

Non-repetitive peak forward surge current

@ t = 1.0µs

@ t = 1.0s

I_FSM

0.5

Repetitive peak forward surge current

Power dissipation

I_FRM

P_D

625

225

℃/W

℃

Thermal resistance junction to ambient

Junction temperature

R_θJA

T_J

150

Storage temperature range

T_STG

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test

I_R= 100µA

V_R=200V

conditions

Min

Max

Unit

Reverse breakdown voltage

Reverse voltage leakage current

250

0.1

µA

I_F=100mA

I_F=200mA

1000

1250

Forward voltage

V_F

Diode capacitance

C_D

t_rr

V_R=0V, f=1MHz

Reveres recovery time

I_F=I_R=30mA,I_rr=0.1×I_R,R_L=100Ω

B,Apr,2012

中文翻译

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