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BAS21S

更新时间: 2024-11-07 17:32:35
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
1页 21K
描述
Reverse Voltage Vr : 250 V;Forward Current Io : 200 mA;Max Surge Current : 2.5 A;Forward Voltage Vf : 1.25 V;Reverse Current Ir : 0.1 uA;Recovery Time : 50 ns;Package / Case : SOT-23;Mounting Style : SMT/SMD

BAS21S 数据手册

  
RECTRON  
SEMICONDUCTOR  
BAS21  
TECHNICAL SPECIFICATION  
SURFACE MOUNT DIODE  
SOT-23  
Absolute Maximum Ratings (Ta=25 C)  
°
Items  
Symbol  
VRRM  
trr  
Ratings  
200  
Unit  
V
ns  
Reverse Voltage  
Reverse Recovery  
Time  
75  
Forward Voltage  
@ If = 100 mA  
Forward Current  
Junction Temp.  
Storage Temp.  
VF  
1.0  
V
(1)  
(2)  
(1)  
IF  
Tj  
Tstg  
200  
-55 to 150  
-55 to 150  
mA  
(3)  
C
C
°
°
Mechanical Data  
Items  
Materials  
SOT-23  
42 Alloy  
Solder Plating  
Au  
Package  
Lead Frame  
Lead Finish  
Bond Wire  
Mold Resin  
Chip  
1. ANODE  
2. NC  
3. CATHODE  
(UNITS: mm)  
Epoxy  
Silicon  
Electrical Characteristics (Ta=25 C)  
°
Ratings  
Symbol  
VRRM  
IFRM  
Ratings  
250  
Unit  
V
IR= 100uA (2)  
Repetitive Peak Reverse Voltage ;  
Repetitive Peak Forward Current  
625  
mA  
Forward Voltage  
IF= 100mA  
VF  
1.0  
IF= 200mA  
1.25  
V
Reverse Current  
VR= 200V  
VR= 200V (Tj= 150 C)  
IR  
trr  
0.10  
100  
75  
uA  
°
Reverse Recovery Time IF= IR= 10mA; RL= 100  
ns  
Thermal Resistance (junction to ambient)  
R JA  
Θ
500  
C/W  
°
Notes:  
1. Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm  
2. At zero life time measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V.  
1315 John Reed Court, Industry, CA 91745  
RECTRON USA  
www.rectron.com  
Tel: (626) 333-3802 Fax: (626) 330-6296  

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