Datasheet > BAS21S

BAS21S

更新时间： 2024-09-28 14:52:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1714K
描述
SOT-23

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中文翻译

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数据手册

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BAS21S 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diodes

BAS21/A/C/S ^{SWITCHING DIODE}

SOT-23

FEATURES

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

BAS21

BAS21A

BAS21C

BAS21S

MARKING: JS

MARKING:JS2

MARKING:JS3

MARKING:JS4

JS2

JS3

JS4

Solid dot = Green molding compound device.

Maximum Ratings @Ta=25℃

Parameter

Symbol

Limit

Unit

Repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_R

250

400

I_FM

Forward continuous current

Average rectified output current

I_O

200

2.5

I_FSM

I_FRM

Non-Repetitive Peak

Forward Surge Current @t=8.3ms

625

Repetitive peak forward surge current

Power dissipation

℃/W

℃

P_D

225

Thermal resistance junction to ambient

Operation Junction and Storage Temperature Range

R_θJA

555

T_J,T_STG

-55~+150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test

I_R= 100µA

V_R=200V

conditions

Min

Max

Unit

Reverse breakdown voltage

Reverse voltage leakage current

250

0.1

µA

I_F=100mA

I_F=200mA

1000

1250

Forward voltage

V_F

Diode capacitance

C_D

t_rr

V_R=0V, f=1MHz

Reveres recovery time

I_F=I_R=30mA,I_rr=0.1×I_R,R_L=100Ω

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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