Datasheet > BAS21RF

BAS21RF

更新时间： 2024-02-27 08:58:13

品牌	Logo	应用领域
TSC		二极管开关
页数	文件大小	规格书
2页	75K
描述
225mW SMD Switching Diode

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中文翻译

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技术参数
数据手册

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BAS21RF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.57	二极管类型：	RECTIFIER DIODE
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

BAS21RF 数据手册

BAS21 / A / C / S

225mW SMD Switching Diode

Small Signal Diode

SOT-23

Features

Fast switching speed

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Min Max

Dimensions

Min

2.80

1.20

0.30

1.80

2.25

0.90

Max

Mechanical Data

Case :SOT-23 small outline plastic package

3.00 0.110 0.118

1.40 0.047 0.055

0.50 0.012 0.020

2.00 0.071 0.079

2.55 0.089 0.100

1.20 0.035 0.043

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Weight : 0.008gram (approximately)

0.550 REF

0.022 REF

BAS21

BAS21S

BAS21C

BAS21A

Ordering Information

Part No.

Packing

Package

SOT-23

BAS21/A/C/S RF

3Kpcs/ 7" Reel

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

Value

Units

Power Dissipation

225

250

Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

Mean Forward Current

V^RRM

IFRM

625

200

Non-Repetitive Peak Forward Surge Current (Note 1)

Thermal Resistance (Junction to Ambient) (Note 2)

Junction and Storage Temperature Range

I^FSM

RθJA

TJ, TSTG

500

°C/W

°C

-55 to + 150

Electrical Characteristics

Type Number

Symbol

Min

Max

Units

Reverse Breakdown Voltage

I_R=

V^(BR)

250

100μA

100mA

200mA

200V

I_F=

1.00

1.25

100

Forward Voltage

V^F

I_F=

V_R=

V_R=1V,

I^R

μA

Reverse Leakage Current

Junction Capacitance

f=1.0MHz

Trr

Reverse Recovery Time I_F=I_R=10mA, R_L=100Ω, I_RR=1mA

50.0

Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Pulse Width=1 μsec

Notes:2. Valid provided that electrodes are kept at ambient temperature

Version : B09

中文翻译

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与BAS21RF相关器件

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BAS21RFG	TSC	获取价格	225mW SMD Switching Diode
BAS21S	WEITRON	获取价格	Surface Mount Switching Diodes
BAS21S	KEXIN	获取价格	Surface Mount Switching Diodes
BAS21S	TSC	获取价格	225mW SMD Switching Diode
BAS21S	PANJIT	获取价格	SURFACE MOUNT, HIGH VOLTAGE, DUAL SWITCHING DIODES
BAS21S	BL Galaxy Electrical	获取价格	Surface mount switching diode
BAS21S	LGE	获取价格	Surface Mount Switching Diode
BAS21S	MCC	获取价格	Rectifier Diode, 2 Element, 0.2A, Silicon, PLASTIC PACKAGE-3
BAS21S	CJ	获取价格	SOT-23
BAS21S	WON-TOP	获取价格	SMD